FPD5W1KX EUDYNA | Alldatasheet

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Technical content

Edition 1.1 July 2004 Avalanche Photodiode FPD5W1KX

FEATURES

  • Data rates up to 2.5Gb/s
  • Operating temperature: -40°c to 85°C
  • Photosensitive diameter: 30µm
  • High cut-off frequency: 3.0GHz at M=5 and 10
  • Large gain-bandwidth product: 40GHz
  • Low dark current: 20nA
  • Low multipled dark current: 3nA
  • Low excess noise factor: 5 at M=10

APPLICATIONS

  • 2.4 Gb/s optical transmission systems

DESCRIPTION

The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD) optimized for operation at 1550nm. This APD is designed for use in optical transmission systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances. The APD chip has a photosensitive area diameter of 30µm. Fujitsu’s advanced InP material technology realizes a high reliability planar structure device with wide bandwidth (large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is aligned to a hermetically sealed APD through a highly stable optical coupling system. Parameter Symbol Ratings Unit ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) Min. Max. Storage Temperature Tstg °C+85-40 Operating Temperature °CTop +85-40 APD Forward Current mAIF 10- APD Reverse Voltage VVR VB- APD Reverse Current mAIR 3(peak)0 Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.

Avalanche PhotodiodeFPD5W1KX Parameter OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40°C to +85°C, λ=1,310/1,550nm, unless otherwise specified) UnitLimits Max.Min. Typ. Test ConditionsSymbol Ipo=2µAMaximum Multiplication Factor 40 -30Mmax dB--30-Optical Return Loss ORL APD Responsivity A/W -0.8 0.85 -0.8 0.92 -0.75 - -- 0.7 -40 ~ +85°C R Excess Noise Factor 6.34 (0.8)- (0.6) M=10, f=30MHz, B=1MHz, Ipo=2µA F (x) Capacitance f=1MHz, VR=0.9 X VB pF 0.7- 0.55Ct - 80070°C - 170085°C Dark Current ID nA 25°C4 0 15 VR=0.9 x VB 2.0 2.5 1.5 Cut-off Frequency RL=50Ω, -3dB from 500kHz GHz GHz GHz fc -M=5, 10 -M=20 M=3 - 3.0 3.0 3.0 - 16070°C - 34085°C Mulitiplied Dark Current IDM nA 25°C1 0 1.5 M=1 Temperature Coefficient of VB Γ V/°C0.08 0.150.12Note (1) APD Breakdown Voltage VB V40 60 50ID = 10µA, 25°C Note 1: Γ=∆VB/dTc

Avalanche Photodiode FPD5W1KX Fig. 1 Responsivity vs. Wavelength Fig. 2 Responsivity vs. Temperature Responsivity, (A/W) 14001300 1450 1500 1550 1600 16501350 0.1 1.0 Wavelength, λ (nm) Temperature, Ta ( °C) Fig. 3 Dark Current vs. Reverse Voltage Dark Current, ID (A) 5040302010 600 10-10 10-12 10-11 10-7 10-6 10-5 10-4 10-9 10-8 Reverse Voltage, VR (V) 25°C 45°C -40°C -25°C 65°C 85°C 0°C -40°C Pin=2µW, M=1 +85°C +25°C Responsivity, (A/W) 0-50 50 100 0.0 0.2 0.4 0.6 0.8 1.0 1310nm 1480nm 1550nm 1600nm 1620nm Pin=2µW, M=1 Fig. 5 Multiplication Characteristics Multiplication Factor, M 5040302010 600 0.1 100 Reverse Voltage, VR (V) -40°C 45°C 65°C 85°C 25°C 0°C -25°C λ=1550nm, Pin=2µW

10 1000.1 1 Photocurrent at M=1, Ipo (µA) Fig. 6 Multiplication Factor vs. PhotocurrentMultiplication Factor, M Relative Response (dB/div.) 1000 100 0123 Frequency (GHz) Fig. 7A Frequency Response (Air Gap ~ 2mm) 0.98VB 0.95VB 0.9VB Mmax M=5 M=3 M=2 M=15M=20 M=10 Ta=25°C, λ = 1,550nm Ta = 25°C, λ = 1,550nm, Pin=2µW, AC coupled, RL = 50Ω 10 1000.1 1 Photocurrent at M=1, Ipo (µA) Fig. 8 Cutoff Frequency vs. Multiplication Factor Multiplication Factor, M 0.1 100 Air Gap=0mm Air Gap=2mm (Air Gap ~ 2mm) PCB Relative Response (dB/div.) 012345 6 Frequency (GHz) Fig. 7B Frequency Response (Air Gap ~ 0mm) M=5 M=3 M=2 M=15 M=20 M=10 Ta = 25°C, λ = 1,550nm, Pin=2µW, AC coupled, RL = 50Ω Ta = 25°C, λ = 1,550nm, Pin=2µW, AC coupled, RL = 50Ω (Air Gap ~ 0mm) PCB Avalanche Photodiode

Ta = 25°C γ (%/°C) Γ (V/°C) Fig. 10 Excess Noise Factor vs. Multiplication Factor Capacitance, Ct (pF) 0.1 0.5 10050105 Fig. 9 Temperature Coefficient vs. Breakdown Voltage Excess Noise Factor, F 5010 100 Reverse Voltage, VR (V) Fig. 11 Capacitance vs. Reverse Voltage Temperature Coeffcient of VB 5045 60 5540 0.3 0.2 0.1 Breakdown Voltage, VB (V) Multiplication Factor, M Ta = 25°C, λ = 1,550nm, Ipo = 2µA, f = 30 MHz, B = 1 MHz f = 1MHz Avalanche Photodiode

2 - R 1.25 2 - C1.5 2.0 3.7 7.4 31 1000 MIN.28 MAX. 17.0 ø2.54 17.0 ø6.0 MAX. ø0.9 3-ø0.35 12.7 7.4 10 MIN. “KX” PACKAGE UNIT: mm Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Y okohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Avalanche Photodiode