FMM5805X EUDYNA | Alldatasheet
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17.5-20GHz Power Amplifier MMIC Item Symbol Drain Voltage VDD 10 V Gate Voltage VGG -3.0 V Input Power Pin 22 dBm °CStorage Temperature -65 to +175Tstg Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged Operating Backside Temperature -40 to +85 °CTop Edition 1.0 May 2000 Item Symbol Output Return Loss RLo Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Power Gain at 1 dB G.C.P. 16 21 26 --8- dB Input Return Loss RLi -- -12 dB dB Frequency Range f 17.5 - 20.0 GHz Output Power at 1 dB G.C.P. 29 31 - dBmP1dB G1dB Drain Current - 700 950 mAIddrf G.C.P.: Gain Compression Point Power-Added Efficiency -3 0- %ηadd VDD = 6V IDD = 650mA (Typ.) ZS = ZL = 50Ω Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
DESCRIPTION
The FMM5805X is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point communication applications.
FEATURES
- High Output Power: P1dB = 31.0dBm (Typ.)
- High Gain: G1dB = 21.0dB (Typ.)
- High PAE: ηadd = 30% (Typ.)
- Impedance Matched Zin/Zout = 50Ω
- 0.25µm PHEMT Technology
17.5-20GHz Power Amplifier MMIC OUTPUT POWER vs. IMD 181412 30 16 20 22 24 26 28 -60 -65 -55 -50 -45 -40 -35 -30 -25 -20 -15 Total Output Power (dBm) IMD (dBc) VDD = 6V IDD = 650mA 18GHz IM3 20GHz IM3 18GHz IM5 20GHz IM5 P1dB, G1dB vs. FREQUENCY 17.517 18 18.5 19 19.5 20 20.5 21 Frequency (GHz) P1dB (dBm), G1dB (dB) VDD = 6V IDD = 650mA P1dB G1dB 220pF220pF 220pF220pF VDD RFout 0.15µF VGG 0.15µF VGG 0.15µF RFin VDD 0.15µF Gap to be minimized at the output ASSEMBLY DRAWING
17.5-20GHz Power Amplifier MMIC S-PARAMETERS VDD = 6V, IDS = 650mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG BONDING LAYOUT
17.5-20GHz Power Amplifier MMIC For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0699M200 CHIP OUTLINE Unit: µm 3470 Chip Size: 3.47±30µm x 2.63±30µm VGG1, VGG2: One bonding is available Chip Thickness: 70±20µm Pad Dimensions: 1. DC 80µm x 80µm 2. RF 120µm x 80µm 1115 2250 2520 2630 0 0 RFin RFout
0 VDD5
110 VDD3VGG2
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION
- Do not ingest.
- Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
- Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.