FMM5804X EUDYNA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
17.5-31.5GHz Power Amplifier MMIC Item Drain Voltage Gate Voltage Storage Temperature Channel Temperature Symbol VDD VGG -3.0 -65 to +175 175 V V Input Power Pin 16 dBm Tstg Tch Operating Backside Temperature -40 to +95 °CTop Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 1.0 and -0.08 mA respectively. 3. This product should be hermetically packaged. Edition 1.4 July 1999 Item Symbol Output Return Loss RLo Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Power Gain at 1 dB G.C.P. 15 18 - --8- dB Input Return Loss RLi -- -15 dB dB Frequency Range f 17.5-31.5 GHz Output Power at 1 dB G.C.P. 21 23 - 23* 25* - dBmP1dB G1dB G.C.P.: Gain Compression Point Power-Added Efficiency -1 8 - %ηadd Drain Current - 300 400 mAIddrf VDD = 6V f = 17.5 ~ 31.5 GHz *: at f = 17.5-30.0 GHz IDD = 250mA (Typ.) ZS = ZL = 50Ω **: at f = 30.0-31.5 GHz Note: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
DESCRIPTION
The FMM5804X is a high-gain, wide band 4-stage MMIC amplifier designed for operation in the 17.5-31.5 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point, point-to-multi-point(LMDS) and satellite communication system applications.
FEATURES
- Output Power: (P1dB): 23.0dBm (Typ.)
- High Gain: (G1dB): 18dB (Typ.)
- High PAE: ηadd = 18% (Typ.)
- Wide Frequency Band: 17.5-31.5 GHz
- Impedance Matched Zin/Zout = 50Ω
- 0.25µm PHEMT Technology
17.5-31.5GHz Power Amplifier MMIC P1dB & G1dB vs. VDD 645 78 VDD (V) G1dB (dB) 31.5GHz P1dB 18GHz P1dB 31.5GHz G1dB 18GHz G1dB P1dB (dBm) IDD = 250mA OUTPUT POWER vs. FREQUENCY 2218 20 24 26 28 30 32 Frequency (GHz) -5dBm -7dBm -3dBm -1dBm 3dBm 1dBm 7dBm P1dB Output Power (dBm) VDD = 6V, IDD = 250mA 220pF VDD 0.15µF RFin RFout 50Ω line on Alumina 50 Ω line on Alumina 220pF 220pF FMM5804X VGG VDD 0.15µF 0.15µF ASSEMBLY DRAWING
17.5-31.5GHz Power Amplifier MMIC S-PARAMETERS VDD = 6V, IDS = 250mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 10 15 20 25 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 Total Output Power (dBm) IMD (dBc) IM3(18 GHz) IM5(18 GHz) IM5(31 GHz) IM3(31 GHz) VDD = 6V IDS = 250mA ∆f = 10MHz IMD vs. OUTPUT POWER
17.5-31.5GHz Power Amplifier MMIC For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE, LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0599M200 CHIP OUTLINE Unit: µm 0 0 0 2610 VGG1 Chip Size: 2610±30µm x 1410±30µm Chip Thickness:70±20µm Pad Dimensions: 1. DC 80 x 80µm 2. RF 120 x 80µm VGG2 VGG3 1140 1335 1140 1410 RFin RFout 55080 25301150 VGG4 1750 VDD3 2330 VDD2 840 VDD1 240 VDD4 2470 2050 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION
- Do not ingest.
- Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
- Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.