FMM5715X EUDYNA | Alldatasheet

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Technical content

FEATURES

  • High Output Power; P1dB = 16 dBm (Typ.) @ f = 60 GHz
  • High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz
  • Wide Frequency Band : 57 - 64 GHz
  • Impedance Matched Zin/Zout = 50Ω Edition 2.1 Dec. 2005 1 FMM5715X

DESCRIPTION

The FMM5715X is a power amplifier MMIC designed for applications in the 57-64 GHz frequency range. This product is well suited for wireless LAN and point-to-point radio. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Device photo ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 o Item Symbol Unit DC Input Voltage V DD V DC Input Voltage V GG V Input Power P in dBm Storage Temperature T stg oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o Item Symbol Unit DC Input Voltage V DD V Backside Temperature T B oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o Min. Typ. Max. Output Power at 1dB G.C.P. P1dB V DD=3V 12 16 - dBm Linear Gain |S 21|V GG=0V 14 18 - dB Total Drain Current IDDt f = 57~64 GHz -1 5 0- m A Input Return Loss |S 11|- 8 - d B Output Return Loss |S 22|- 8 - d B ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Rating -55 to +125 -45 to +85 Condition Item Symbol Condition Limit Unit Class 0 ~ 199V These values are representative for CW on chip measurements that are made without bonding wires at the RF ports.

-14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) Output Power (dBm) Output Power vs. Input Power Bias Conditions: VDD = 3V, VGG = 0 V 60GHz Power Amplifier MMIC FMM5715X Output Power vs. Frequency Bias Conditions: VDD = 3V, VGG = 0 V f=64GHzf=60GHz f=57GHz 54 56 58 60 62 64 66 68 Freq (GHz) Pout (dBm) P1dB Pin = -4 dBm Pin = -6 dBm Pin = -8 dBm Pin = 0 dBm Pin = -2 dBm Pin= -10 dBm Pin = 2 dBm Typical on chip measurements

-25 -20 -15 -10 50 55 60 65 70 Frequency (GHz) |S 22 | (dB) -25 -20 -15 -10 50 55 60 65 70 Frequency (GHz) |S 11 | (dB) 50 55 60 65 70 Frequency (GHz) |S 21 | (dB) Input Return Loss vs. Frequency Bias Conditions: VDD = 3V, VGG = 0, -0.1, -0.2 V Output Return Loss vs. Frequency Bias Conditions: VDD = 3V, VGG = 0, -0.1, -0.2 V Linear Gain vs. Frequency Bias Conditions: VDD = 3V, VGG = 0, -0.1, -0.2 V VGG = -0.1 V, IDD = 130 mA VGG = 0 V, IDD = 150 mA VGG = -0.2 V, IDD = 100 mA VGG = -0.1 V, IDD = 130 mA VGG = 0 V, IDD = 150 mA VGG = -0.2 V, IDD = 100 mA VGG = -0.2 V, IDD = 100 mA VGG = -0.1 V, IDD = 130 mA VGG = 0 V, IDD = 150 mA 60GHz Power Amplifier FMM5715X Typical on chip measurements

-25 -20 -15 -10 0 2 04 06 08 0 1 0 0 Frequency (GHz) S-PARAMETERS VDD = 3V, VGG = 0V, IDD = 150 mA S11 S22 60GHz Power Amplifier MMIC FMM5715X -40 -30 -20 -10 0 2 04 06 08 0 1 0 0 Frequency (GHz) |S 21 | (dB) Typical on chip measurements

VDD = 3V, VGG = 0V, IDD= 150 mA 60GHz Power Amplifier FMM5715X Freq. Freq. GHz MAG ANG MAG ANG MAG ANG MAG ANG GHz MAG ANG MAG ANG MAG ANG MAG ANG S11 S21 S12 S22S11 S21 S12 S22 Typical on chip measurements

Bonding Pad Locations (Dimension in Micron Meters) Unit; µm Chip size; 2190 x 920 µm Chip Thickness; 70 µm 120 460 800 540 101080 1305 2110 VDD1 VDD2 VDD3 VGG1 VGG2 VGG3 RFin RFout Pad Dimensions DC Pads; 80 x 80 µm RF Pads; 80 x 60 µm 490 1105 1860 60GHz Power Amplifier MMIC FMM5715X

60GHz Power Amplifier MMIC FMM5715X Assembly Diagrams RF In RF Out To DC Power Supply (VDD) Z0 = 50Ω Z0 = 50Ω Single Layer Capacitor ≥100 pF *1 *1 *1; RF Wire Length = 150 µm *2; DC Wire Length ≤ 1000 µm RF In RF Out To DC Power Supply (VDD) Z0 = 50Ω Z0 = 50Ω Single Layer Capacitor ≥100 pF *1 *1 VGG1 (AMP) V GG2(AMP) V GG3(AMP) DC Power Supply for a Custom Application Single Layer Capacitors ≥100 pF Recommendation assembly

60GHz Power Amplifier MMIC FMM5715X MTTF vs. Backside Temperature 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12 20 40 60 80 100 120 140 160 180 BacksideTemperature (degC) MTTF (hrs) Ea=1.02eV

60GHz Power Amplifier MMIC FMM5715X DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2)Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Perform Volume : per next Figure WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N +/- 0.0196 N Stage Temperature : 215 deg.C +/- 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 100 200 300 400 500 012345 Area of Chip Back Surface (mm^2) Volume of Au-Sn Perform (10 -3/mm3) FMM5715X

60GHz Power Amplifier MMIC FMM5715X Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City

33 Canton Road, Tsimshatsui, Kowloon

TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 © 2005 Eudyna Devices USA Inc. Printed in U.S.A.