FMM5702X EUDYNA | Alldatasheet
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Technical content
Drain-Source Voltage VDD 5V Input Power Pin -4 dBm °CStorage Temperature -65 to +175Tstg Operating Backside Temperature °CTop -45 to +125 Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 4 volts. 2. This product should be hermetically packaged. Edition 1.0 February 2000 Item Symbol Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Input Return Loss RLin -- -12 dB Output Return Loss RLout --9-d B Noise Figure - 1.6 2.0 dBNF Associated Gain 11.0 13.0 - dBGas VDD = 4V f = 30.0 GHz IDD = 5mA (Typ.) ZS = ZL = 50Ω Note: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
FEATURES
- Low Noise Figure: NF = 1.6dB (Typ.) @ f=30 GHz
- High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz
- Wide Frequency Band: 27-32 GHz
- Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FMM5702X is a LNA MMIC designed for applications in the 27-32 GHz frequency range. This product is well suited for satellite communications and radio link applications where low noise and high gain is required.
3.0 4.85 0.1 1.4 φ0.6 50Ω 100pF 4.20 60° FMM5702X DC BLOCKING CAPACITOR 4pF 3.0 3.0 2.6 1.01.0 0.8 0.4 0.76 DC BLOCKING CAPACITOR 4pF Unit: mm Thickness: 0.254mm εr: 2.17 RF OUTPUT RF INPUT +VDD (4V)
VDD =4V, IDS = 5mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG NOTE:* The data includes bonding wires. n: number of wires RF IN n=1 (0.3mm length, 25µm Dia Au wire) RF OUT n=1 (0.3mm length, 25µm Dia Au wire)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0599M200 Unit: µm Die Thickness: 110µm(Typ.) 440 80 570115 80 115 44080 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION
- Do not ingest.
- Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
- Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FMM5702X 27-32GHz LNA MMIC CHIP OUTLINE