FMM5057X EUDYNA | Alldatasheet
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Technical content
C-Band Power Amplifier MMIC
FEATURES
- High Output Power; P1dB = 34 dBm (Typ.)
- High Linear Gain; GL = 27 dB(Typ.)
- Frequency Band ; 7.1 - 8.5 GHz
- High Linearity ; OIP3 = 42.5 dBm(typ.)
- Impedance Matched Zin/Zout = 50Ω Edition 1.1 January 2006 FMM5057X
DESCRIPTION
The FMM5057X is a power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 7.1 to 8.5GHz frequency range. This product is well suited for point-to-point radio applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Unit Drain-Source Voltage VDD V Gate-Source Voltage VGG V Input Power Pin dBm Strage Temperature Tstg ℃ RECOMMENDED OPERATING CONDITIONS Item Symbol Unit Drain-Source Voltage VDD V Input Power Pin dBm Drain Current without RF IDD(DC) mA Operating Backside Temperature Top ℃ This Product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃℃℃℃) Min. Typ. Max. Frequency Range f VDD=10.0V 7.1 - 8.5 GHz Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm 23 26 - dB Gain Flatness ΔG - +/- 1.2 +/-2.0 dB Input Return Loss RLin 7.0 10 - dB Output Return Loss RLout - 10 - dB Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Class 0 ~ 199V Unit ≦1200 Item Symbol LimitsTest Conditions -40 to +85 Rating -55 to +125 Condition ≦10 http://www.eudyna.com/
Output Power vs. Frequency C-Band Power Amplifier MMIC FMM5057X Output Power, Drain Current vs. Input Power Power Added Efficiency vs. Frequency VDD=10V, IDD(DC)=1200mA Frequency [GHz] Output Power [dBm] Pin=0dBm Pin=4dBm Pin=8dBm Pin=12dBm P1dB VDD=10V, IDD(DC)=1200mA - 4 - 2 02468 1 0 1 2 1 4 1 6 Input Power [dBm] Output Power [dBm] 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 Drain Current [mA] 7.1GHz 7.7GHz 8.5GHz Pout Drain Current VDD=10V, IDD(DC)=1200mA Frequency [GHz] Power Added Efficiency [%] Pin=0dBm Pin=4dBm Pin=8dBm Pin=12dBm P1dB
IMD vs. Output PowerIMD vs. Frequency C-Band Power Amplifier MMIC FMM5057X VDD=10V, IDD(DC)=1200mA, Pout=20dBm S.C.L. -60 -55 -50 -45 -40 -35 -30 Frequency [GHz] Intermodulation Distortion [dBc] IM3 VDD=10V, IDD(DC)=1200mA -60 -55 -50 -45 -40 -35 -30 -25 -20 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] Intermodulation Distortion [dBc] 7.1GHz 7.8GHz 8.5GHz IM3
Output Power, Drain Current vs. Input Power by Drain Voltage C-Band Power Amplifier MMIC FMM5057X Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=1200mA, f=7.1GHz - 4 - 2 02468 1 0 1 2 1 4 1 6 Input Power [dBm] Output Power [dBm] 800 900 1000 1100 1200 1300 1400 1500 1600 Drain Current [mA] 10V D rain Current Pout IDD(DC)=1200mA, f=7.7GHz - 4 - 2 02468 1 0 1 2 1 4 1 6 Input Power [dBm] Output Power [dBm] 800 900 1000 1100 1200 1300 1400 1500 1600 Drain Current [mA] 10V D rain Current Pout IDD(DC)=1200mA, f=8.5GHz -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Output Power [dBm] 800 900 1000 1100 1200 1300 1400 1500 1600 Drain Current [mA] 10V Drain Current Pout Output Power, Gain vs. Drain Voltage IDD(DC)=1200mA 56789 1 0 1 1 Drain Voltage [V] P1dB [dBm] G1dB [dB] 7.1GHz 7.7GHz 8.5GHz P1dB G1dB
Output Power, Drain Current vs. Input Power by Drain Current C-Band Power Amplifier MMIC FMM5057X Output Power, Drain Current vs. Input Power by Drain Current Output Power, Drain Current vs. Input Power by Drain Current Output Power, Gain vs. Drain Current VDD=10V, f=7.1GHz - 4 - 2 02468 1 0 1 2 1 4 1 6 Input Power [dBm] Output Power [dBm] 700 900 1100 1300 1500 1700 1900 2100 2300 Drain Current [mA] 800m A 1200mA 1600mA Dr ain Cur r e nt Pout VDD=10V, f=7.7GHz - 4 - 2 02468 1 0 1 2 1 4 1 6 Input Power [dBm] Output Power [dBm] 700 900 1100 1300 1500 1700 1900 2100 2300 Drain Current [mA] 800mA 1200mA 1600mA Drain Curr e nt Pout VDD=10V, f=8.5GHz -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Output Power [dBm] 700 900 1100 1300 1500 1700 1900 2100 2300 Drain Current [mA] 800mA 1200mA 1600mA Dr ain Cur r e nt Pout VDD=10V 400 600 800 1000 1200 1400 1600 1800 Drain Current [mA] P1dB [dBm] G1dB [dB] 7.1GHz 7.7GHz 8.5GHz P1dB G1dB
IMD vs. Output Power by Drain Voltage C-Band Power Amplifier MMIC FMM5057X IMD vs. Output Power by Drain Voltage IMD vs. Output Power by Drain Voltage IDD(DC)=1200mA, f=7.1GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] Intermodulation Distortion [dBc] 10V IM3 IDD(DC)=1200mA, f=7.7GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] Intermodulation Distortion [dBc] 10V IM3 IDD(DC)=1200mA, f=8.5GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] Intermodulation Distortion [dBc] 10V IM3
IMD vs. Output Power by Drain Current C-Band Power Amplifier MMIC FMM5057X IMD vs. Output Power by Drain Current IMD vs. Output Power by Drain Current VDD=10V, f=7.1GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] Intermodulation Distortion [dBc] 800mA 1200mA 1600mA IM3 VDD=10V, f=7.7GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] Intermodulation Distortion [dBc] 800mA 1200mA 1600mA IM3 VDD=10V, f=8.5GHz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] Intermodulation Distortion [dBc] 800mA 1200mA 1600mA IM3
C-Band Power Amplifier MMIC FMM5057X ■■■■S-PARAMETER @VDD=10V, IDD=1200mA -30 -25 -20 -15 -10 0 2 4 6 8 10 12 14 16 18 20 Frequency [GHz] Sxx [dB] S11 S22 S21 @VDD=10V, IDD=1200mA -30 -25 -20 -15 -10 66 . 577 . 588 . 599 . 5 Frequency [GHz] Sxx [dB] S11 S22 S21
C-Band Power Amplifier MMIC FMM5057X ■■■■S-PARAMETER @VDD=10V, IDD=1200mA
C-Band Power Amplifier MMIC FMM5057X ΔΔΔΔTch vs. Drain Voltage (Reference) IDD(DC)=1200mA 56789 1 0 1 1 VDD [V] ΔΔΔΔTch [℃℃℃℃] 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09 1.0E+10 1.0E+11 1.0E+12 1000/Tch (1/K) MTTF (hours) 270 250 145 125 Tch (℃) MTTF vs. Tch
C-Band Power Amplifier MMIC FMM5057X ■■■■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) Chip Thickness : 70±±±±20um Bonding Pad Size : RF-Pad : 120um x 240um VDD Pad : 240um x 120um VGG Pad : 120um x 120um 0 0 3230 RF-IN RF-OUT VDD2 VDD3 VDD4VDD1 VGG VDD5 4130 4130 3230 128 128 16181618 30753075 31053105 737 737 1204 1204 2000 2000 3545 3545 VDD6
C-Band Power Amplifier MMIC FMM5057X ■■■■ Recommended Assembly Diagrams Note : * High isolation between VDD1 and VDD2 is needed. * “Copper” is the recommended material for the package or carrier. 220pF220pF 220pF 220pF 0.15uF 220pF VDD2 VGG 220pF 220pF 0.15uF VDD1 0.15uF 0.15uF VDD3
C-Band Power Amplifier MMIC FMM5057X ■■■■DIE ATTACH 1) The die-attach station must have accurate temperature control and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure ■■■■ WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 deg.C ± 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 500 1000 1500 2000 2500 0 2 4 6 8 1 01 21 41 61 82 0 Area of Chip Bach Surface (mm^2) Volume of Au-Sn Perform (10 -3/mm3) FMM5057X
C-Band Power Amplifier MMIC FMM5057X For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-8738-1695 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City
33 Canton Road, Tsimshatsui, Kowloon
TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. © 2006 Eudyna Devices Inc.