FMM5049VT EUDYNA | Alldatasheet

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Technical content

+12 -55 to +125 V V Input Power Pin +15 dBm °CTstg Operating Backside Temperature -40 to +85 °CTop Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 10 volts. 2. The drain-source operating voltage (VGG) should not exceed -5 volts. Edition 1.0 October 2001 Item Symbol Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Linear Gain (Note 1) 30.0 33.0 - dB -- 2500 mA Output Power 39.0 41.0 - dBmPout GL -7 0- m A Drain Current - 4000-m AIDD IGG IDD(DC) VDD1,2 = 10V f = 2.2GHz Pin = 12dBm Without RF Note 1 Pin≤-6dBm Gate Current DC Input Current

DESCRIPTION

The FMM5049VT is a high-gain, wide band, three-stage MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the 1.8-2.3GHz band. The output stage is partially matched for this device. This product is uniquely suited for use in base station amplifiers as it offers high gain, long term reliability and ease of use.

FEATURES

  • High Output Power: Pout = 41.0dBm (Typ.)
  • High Linear Gain: GL = 33.0dB (Typ.)
  • Broad Band: 1.8 to 2.3GHz
  • Hermetically Sealed Package FMM5049VT Power Amplifier MMIC

OUTPUT POWER, IDD vs. INPUT POWER @ W-CDMA BAND(TUNED) -6 -4 -2-8 0 2 4 6 8 10 12 2800 2400 3200 3600 4000 4400 4800 5200 5600 Pin (dBm) Pout (dBm) IDD (mA) VDD = 10V, VGG = -5V Pout(2.1GHz) IDD(2.1GHz) Pout(2.15GHz) IDD(2.15GHz) Pout(2.2GHz) IDD(2.2GHz) OUTPUT POWER vs. FREQUENCY @ W-CDMA BAND(TUNED) Frequency (GHz) Output Power (dBm) Pin=12dBm 8dBm 4dBm 0dBm -4dBm ACP, IMD & IDD vs. OUTPUT POWER @ W-CDMA BAND(TUNED) 3026 28 32 34 36 -50 -40 -30 -20 -10 Total Output Power (dBm) ACP (dBc), IMD (dBc) 1000 1500 2500 2000 3000 3500 IDD (mA) IDD IMD 10M VDD = 10V, VGG = -5V VDD = 10V, VGG = -5V, W-CDMA 2-tone Signal, f1 = 2.14GHz, f2 = 2.155GHz

VDD1,2 = 10V, VGG = -5V FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 10 250 2.9GHz 2.9GHz 2.5 2.5 2.7 2.7 1.7 1.7 1.9 1.9 2.1 2.1 2.3 2.3 .01 .005 SCALE FOR |S21| 50Ω SCALE FOR |S12| 2.9GHz 2.9GHz 2.5 2.5 2.7 2.7 1.7 1.7 2.1 2.1 2.3 2.3 1.9 1.9 100

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0901M200 1.5Min. 1.5Min. 1.6 0.2Max. 0.3 5.2Max. 2.63.2 21.0 17.0 10.7±0.3 10.7 3.2 12.9±0.2 2-3.2 (1.8) Index 2-R1.6 0.1 1. VDD1 2. Pin 3. VGG 4. NC 5. Pout 6. VDD2 7. Source(GND) Unit: mm Case Style "VT" Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not ingest.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.