FMM5027VJ EUDYNA | Alldatasheet
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Technical content
Edition 1.1 August 1999 FMM5027VJ MMIC Power Amplifier
DESCRIPTION
The FMM5027VJ is a MMIC power amplifier that includes three amplifier stages designed for applications in the 0.8 to 3.0GHz frequency range. This product is uniquely suited for use in cellular, PCS/PCN, WLL base station amplifiers as it offers high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
FEATURES
- Wide Frequency Band: 0.8 to 3GHz
- Medium Power: P1dB=26dBm (Typ.)@f=0.8 - 3GHz
- High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz
- Wide Operating Temperature Range
- Hermetically Sealed Package Item DC Input Voltage DC Input Voltage Storage Temperature Operating Case Temperature Symbol VDD1, 2 V V VGG1, 2 Tstg Top -55 to +150 -40 to +85 Input Power dBmPin 15 Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Gain Flatness Input VSWR DC Input Current DC Input Current CASE STYLE: VJ Symbol f 0.8 - 3.0 25.0 26.0 - 17.0 19.0 - - 2.0 3.0 - 2:1 - - 220 300 VDD1, 2 = 8V VGG1, 2 = -3V Pin = -5dBm VDD1, 2 = 8V VGG1, 2 = -3V GHz dBm dB dB mA -24 m A P1dB GL VSWRi IDD IGG Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) G.C.P.: Gain Compression Point
OUTPUT POWER vs. FREQUENCY Pin=+10dBm +6dBm P1dB -2dBm +2dBm -6dBm -10dBm 0.5 1 2 2.5 3 1.5 Frequency (GHz) Output Power (dBm) VDD=8V VGG=-3V VDD=8V VGG=-3V OUTPUT POWER vs. INPUT POWER -8 -4 0 4 8 Input Power (dBm) Output Power (dBm) 0.8, 2.0GHz 3.0GHz VDD=8V VGG=-3V fo = ∆f=+10MHz 2-tone test OUTPUT POWER vs. IMD 8 1 01 21 41 61 82 02 22 42 6 Total Output Power (dBm) -60 -56 -52 -48 -40 -44 -36 -32 -28 -24 IMD (dBc) 1GHz 2GHz 3GHz IM5 IM3
180° +90° -90° .01 .02 69312
0.5 GHz
0.8 0.82.7 2.7 2.2 1.8 1.82.21.5 1.5 3.5GHz 0.5 GHz 0.8 0.8 2.7 2.7 1.8 1.8 2.22.2 1.5 1.5 3.5GHz 3.5GHz 3.5GHz S11 S22 S21 S12 +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 25010 25 SCALE FOR |S12| SCALE FOR |S21| S-PARAMETERS VDS = 8V, VGG = -3V FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION
- Do not put these products into the mouth.
- Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
- Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Case Style VJ INDEX Unit: mm(inches) 4.8±0.2 (0.189) 1.2±0.2 (0.047) 7.2±0.2 (0.283) 543 89 1 0 10-0.38 (0.015) 6.3±0.2 (0.248) 1.2±0.2 (0.047) 3.9±0.2 (0.154) 6-1.27 (0.050)1.5 Max. (0.059) 0.15 (0.006) 1.9 (0.075) 2.9 (0.114) 3.8 (0.150) 2.8 (0.110) LEAD ASSIGNMENT Lead Symbol Lead Symbol 1. RF in 6. RF out/VDD2 2. NC 7. NC 3. VGG1 8. VDD1 4. GND 9. GND 5. VGG2 10. NC