FMM3117VN EUDYNA | Alldatasheet
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FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.1 FMM3117VN 12.5Gbps Dual-drive LN Modulator Driver IC 1. Features 1) High Speed Operation up to 12.5Gbps 2) On-chip 50 ohm Termination for High Speed Data Input 3) Rapid Rise/Fall Time : 25ps (Typ., 20-80%) 4) Adjustable Output Voltage Swing :2.0Vpp to 2.85Vpp (50ohm Load) 5) Adjustable Output Offset Level 6) Single Power Supply Voltage : -5.2V 7) Duty Ratio Adjustment 8) 6mm x 6mm 32-pin Hermetically Sealed Ceramic Package 2. Maximum Ratings The semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. The normal logic operation is not assured even within the ratings. Table 2-1. Maximum Ratings Parameter Symbol Value Unit Supply Voltage Vss -6.50 to 0.0 V Input Voltage Vin -2.0 to 0.5 V Power Supply Current Iss 500 mA Output Swing Control VoltageV i p Vss-0.5 to Vss+2.2 V Output Offset Control VoltageV IB1,VIB2 -8.0 to 0.5 V Output Offset Control Current IB1 ,IB2 50 mA Duty Control Voltage Vdut Vss-0.5 to Vss+2.2 V Output Voltage Vout -3.1 to 0.5 V Storage Temperature Tstg -55 to 125 de gC This device contains Gallium Arsenide(GaAs). For safety, please observe the following: (1) Do not put devices in your mouth. Gallium Arsenide is dangerous if ingested. (2) Do not burn, crush, or process chemically. It is dangerous to inhale or ingest the gas, powder, or liquid which results from burning, crushing or chemical processing of the devices. (3) Discard devices separately from industrial and domestic wastes in accordance with the method specified by law. GaAs CAUTION
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.2 3. Recommended Operating Conditions The recommended operating conditions are the recommended values assuring normal operation and long term reliability. Table 3-1. Recommended Operating Conditions Limit Parameter Symbol Condition Min. Typ. Max. Unit Supply Voltage VSS -5.46 -5.20 -4.94 V Input Data Level High V IH -0.50 0.00 V Input Data Level Low V IL Differential Input Data Swing = 0.25~1.20Vpp Single-ended Input Data Swing = 0.50~1.20Vpp -1.20 -0.25 V VISD Differential Input 0.25 1.20 Vpp Input Data Swing VISS Single-ended Input 0.5 1.20 Vpp Output Swing Control Voltage Vip Vss --- Vss+2.0 V Output Offset Control Voltage V IB1,VIB2 Vss --- 0.0 V Output Offset Control Current IB1,IB2 0 30 mA Duty Ratio Control Voltage Vdut Vss --- Vss+2.0 V Case Temperature T C 0 --- 75 degC 4. Electrical Characteristics Table4-1. Electrical Characteristics ( Tc = 25 degC , Vss = -5.20V,RL=50ohm) Limit Parameter Symbol Condition Min. Typ. Max. Unit Maximum Data Rate fb NRZ 12.5G --- --- bps Power Supply Current Iss VOUT=2.85VPP, R L=50ohm IB1=IB2=0mA --- 220 280 mA Output Voltage Swing (max.) V OUTMAX 2.85 --- --- Vpp Output Voltage Swing (min.) V OUTMIN --- --- 2.0 Vpp Rise Time Tr --- 25 35 ps Fall Time Tf 20 to 80 % VOUT=2.5Vpp --- 25 35 ps Output Low Voltage V OL -3.0 --- --- V Crossing Adjustment Range Crossing Din/DinB=0.50Vpp VOUT=2.85VPP 45 55 % Jitter RMS(OUT) Jitter Din/DinB=0.50Vpp VOUT=2.85Vpp Cross=50% --- --- 3.0 ps
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.3 5. Block Diagram Figure 5-1. Block Diagram Table 5-2. Truth table for Dout and DoutB Din DinB Dout DoutB 01L H
10 H L
50ohm* 300 ohm 75ohm* IB1 50ohm* IB2 Voltage Driver IP *On chip resistor values may vary.
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.4 6. Pin Description Table 6-1 Pin Description Pin Number Symbol I/O Function Remarks
1 GND --- Ground
2 GND --- Ground
3 DinB I Complementary Data Input
4 GND --- Ground
5 GND --- Ground
6 Din I Data Input
7 GND --- Ground
8 GND --- Ground
9 GND --- Ground
10 Vdut I Duty Ratio Control
11 Vss --- Supply Voltage
12 Vss --- Supply Voltage
13 Vip I Output Swing Control
14 IP --- Peak Current monitor (Vss)
15 IB2 I DoutB Offset Control
16 GND --- Ground
17 GND --- Ground
18 GND --- Ground
19 DoutB O Complementary Data Output
20 GND --- Ground
21 GND --- Ground
22 Dout O Data Output
23 GND --- Ground
24 GND --- Ground
25 GND --- Ground
26 IB1 I Dout Offset Control
27 GND --- Ground
28 GND --- Ground
29 Vss --- Supply Voltage
30 Vss --- Supply Voltage
31 GND --- Ground
32 GND --- Ground
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.5 7. Package Fig.7-1 Package Outline [unit : mm]
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.6 8. Test Circuit To external Bias circuit To external Bias circuit Top View Pulse Pattern Generator 91 6 32 25 Sampling Oscilloscope VssC1 C2 C2 VdutVdutVdutVdut VipVipVipVip IPIPIPIP IB2IB2IB2IB2 DoutBDoutBDoutBDoutB DoutDoutDoutDoutDinBDinBDinBDinB DinDinDinDin IB1IB1IB1IB1 ATT A R1 : 0 to 500 ohm (10 turns) C2 : 0.068 uF R2 : 500 ohm R3 : 50 ohm C1 : 0.33 uF ATT
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.7 9.Typcal Measurement data Tc=25 deg.C, V SS = -5.2V, VIB1=VIB2=0V, 12.5 Gbps, PRBS 2^23-1, R L=50 ohm, VOUT=2.85 VPP Fig. 8-1 Electrical Eye Diagrams of Dout [H: 20ps/Div. , V:0.5V/Div.] Fig. 8-2 VOUT-Vip Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Vip [V] VOUT [Vpp] Vss=-5.2V,Ta=25degC, VIB1=VIB2=0V, RL=50ohm
FMM3117VN Datasheet Rev. B2 April, 2004 Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.Eudyna Devices Inc.8 10. Schematic Diagram for Interconnection with LN modulator 1) The contents of this document are subject to change without notice. Customers are advised to consult with Eudyna sales representatives before ordering. 2) The information, such as descriptions of function and application circuit examples, in this document are presented solely fo r the purpose of reference to show examples of operations and uses of Eudyna semiconductor device; Eudyna does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Eudyna assumes no liability for any damages whatsoever ar ising out of the use of the information. 3) Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as licen se of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Eudyna or any third party or does Eudyna warrant non-infringement of any third-party's intellectual property right or other right by using such information. Eudyna assu mes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. 4) The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a seriou s effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Eudyna will not be liable against you and/or any third party for any claims or damages arising in connection w ith above- mentioned uses of the products. 5) Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of ov er-current levels and other abnormal operating conditions. 6) If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those pr oducts from Japan. FMM3117VN 50 ΩΩΩΩ AC blocking inductor DC blocking capacitor To LN Modulator Dout DoutB External Bias-T 50 ΩΩΩΩ To LN Modulator AC blocking inductor DC blocking capacitor