FMM1061VJ EUDYNA | Alldatasheet
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Technical content
Edition 1.1 August 1999 FMM1061VJ GaAs MMIC
DESCRIPTION
The FMM1061VJ is a GaAs Microwave Static Frequency Divider designed for dividing an input signal by 4 over a frequency range from 2.0 to 6.0 GHz. This part is designed for Microwave Frequency Synthesizer and Phase-Locked Oscillator applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
FEATURES
- Operation to 6.0 GHz
- Input Frequency divide by 4, OUT and OUT
- -5V (or+5V) DC Single Power Supply
- External 50 ohm Load Driving Capability
- Small 10 pin Hermetic SMT-10 Package (VJ)
- Tape and Reel available Parameter Supply Voltage Input Voltage Input Power Storage Temperature Power Dissipation Symbol Vss -7.0 to 0 Vss to 0 -55 to +125 1.0 +13.0 V V dBm W Vin Pin Tstg PD Ratings Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Power Supply Current Symbol Iss - 100 - mA Operating Frequency fin 2.0 - 6.0Pin = 0~10dBm GHz Output Power Po 0 4 - dBm Condition Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta = 25°C, Vss = -5.0V) CASE STYLE: VJ Parameter Supply Voltage Symbol Ambient Temperature Ta -30 - +70 °C UnitLimit Typ. Max.Min. RECOMMENDED OPERATING CONDITIONS
50Ω 1000pF Test Circuit Negative Supply Voltage Vss = -5V Operation Circuit 50Ω 50Ω 0.33µF 2 1 6 7 101000pF 1000pF 1000pF VSS = -5.0V INPUT OUTPUT OUTPUT GND VSS VDD GND OUT GND OUT IN GND IN Positive Supply Voltage VDD = +5V Operation Circuit 50Ω 50Ω 50Ω 0.33µF 101000pF 1000pF 1000pF 1000pF VDD = +5.0V INPUT GND VSS VDD GND OUT GND OUT OUTPUT OUTPUT IN GND IN
-30 -25 -20 -15 -10 Input Frequency (GHz) Pout Pin Input Power (dBm) Output Power (dBm) INPUT SENSITIVITY CHARACTERISTICS Vss = -5.0V, Ta = 25°C RECOMMENDED OPERATING REGION (2GHz~6GHz)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION
- Do not put these products into the mouth.
- Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
- Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. INDEX Unit: mm(inches) 4.8±0.2 (0.189) 1.2±0.2 (0.047) 7.2±0.2 (0.283) 543 89 1 0 10-0.38 (0.015) 6.3±0.2 (0.248) 1.2±0.2 (0.047) 3.9±0.2 (0.154) 6-1.27 (0.050) 0.15 (0.006) 1.9 (0.075) 2.9 (0.114) 3.8 (0.150) 2.8 (0.110) LEAD ASSIGNMENT Lead Symbol Lead Symbol 1. VDD 6. Vss 2. GND 7. GND 3. IN 8. OUT 4. GND 9. GND 5. IN 10. OUT Case Style “VJ”