FLX257XV EUDYNA | Alldatasheet

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Technical content

Edition 1.4 October 2004 FLX257XV GaAs FET & HEMT Chips Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Power-added Efficiency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Symbol IDSS - 1000 1500 - 600 - -1.0 -2.0 -3.5 -5 -- 6.5 7.5 - -3 1 - 32.5 33.5 - VDS = 5V, IDS = 50mA VDS = 5V, IDS = 600mA VDS = 5V, VGS = 0V IGS = -50µA VDS = 10V IDS ≈ 0.6IDSS f = 10GHz mA mS V dB dBm V gm Vp VGSO P1dB G1dB ηadd Thermal Resistance -8 1 0Rth Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) Channel to Case °C/W The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

DESCRIPTION

The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. 95 40 (Unit: µm) Drain Drain Drain Drain GateGate Gate Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 15.0 -65 to +175 175 Tc = 25°C V V W Ptot Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with gate resistance of 200Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.

FEATURES

  • High Output Power: P1dB = 33.5dBm(Typ.)
  • High Gain: G1dB = 7.5dB(Typ.)
  • High PAE: ηadd = 31%(Typ.)
  • Proven Reliability

GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 0 50 100 150 200 24 681 0 Case Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (W) 17 19 21 23 25 27 Input Power (dBm) Output Power (dBm) 1000 750 500 250 Drain Current (mA) VGS =0V -0.5V -1.5V -2.0V -1.0V OUTPUT POWER vs. INPUT POWER VDS=10V IDS≈0.6IDSS f = 10GHz ηadd Pout ηadd (%)

VDS = 10V, IDS = 600mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG NOTE:* The data includes bonding wires. n: number of wires Gate n=8 (0.2mm length, 25µm Dia Au wire) Drain n=8 (0.2mm length, 25µm Dia Au wire) FLX257XV GaAs FET & HEMT Chips

Source electrodes are connected to the PHS by Via-HOLE Via-Hole Die Thickness: 60±20µm 95 40 480±30 1770±30 (Unit: µm) 4460 Drain Drain Drain Drain GateGate Gate 7060 (Unit: µm) 106 60 106 128 FLX257XV GaAs FET & HEMT Chips Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Y okohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A.