FLX207MH-12 EUDYNA | Alldatasheet

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Technical content

Edition 1.1 August 1999 FLX207MH-12 X, Ku Band Power GaAs FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 12.5 -65 to +175 175 Tc = 25°C V V W PT Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with gate resistance of 250Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Power-added Efficiency Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS - 800 1200 - 400 - -1.0 -2.0 -3.5 -5 - - 6.0 7.0 - -2 8- 31.5 32.5 - VDS = 5V, IDS = 40mA VDS = 5V, IDS = 500mA VDS = 5V, VGS = 0V IGS = -40µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12.5 GHz mA mS V dB dBm V gm Vp VGSO P1dB G1dB ηadd Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Channel to CaseThermal Resistance -1 0 12 °C/WRth G.C.P.: Gain Compression PointCASE STYLE: MH

DESCRIPTION

The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

FEATURES

  • High Output Power: P1dB = 32.5dBm(Typ.)
  • High Gain: G1dB = 7.0dB(Typ.)
  • High PAE: ηadd = 28%(Typ.)
  • Proven Reliability
  • Hermetic Metal/Ceramic Package

X, Ku Band Power GaAs FET -1.5V POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 0 50 100 150 200 204 6 8 1 0 Case Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (W) 600 200 400 800 1000Drain Current (mA) VGS =0V -0.5V -2.0V -1.0V OUTPUT POWER vs. INPUT POWER 16 18 20 22 24 26 Input Power (dBm) Output Power (dBm)ηadd Pout ηadd (%) ηadd (%) P1dB & ηadd vs. VDS f = 12.5 GHz IDS ≈ 0.6 IDSS 89 1 0 Drain-Source Voltage (V) 30 20 P1dB (dBm) ηadd P1dB f = 12.5GHz IDS ≈ 0.6 IDSS VDS=10V VDS=8.5V

X, Ku Band Power GaAs S-PARAMETERS VDS = 10V, IDS = 480mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 12 13 50Ω2510 100 250 SCALE FOR |S21| SCALE FOR |S12| 14GHz 14GHz.02 .04 .06 .08 1111 14GHz 14GHz .41.2 .81.6

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLX207MH-12 X, Ku Band Power GaAs FET 2-Ø 1.8±0.15 (0.071) 0.5 (0.020) 1.65±0.15 (0.065) 6.7±0.2 (0.264) 1.0 Min. (0.039) 1.0 Min. (0.039) 1.0 (0.039) 3.5±0.15 (0.138) Case Style "MH" Metal-Ceramic Hermetic Package Unit: mm(inches) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) 0.1 (0.004) 2.8 Max. (0.110) 234 10.0±0.3 (0.394) 3.5±0.3 (0.138)