FLU10XM EUDYNA | Alldatasheet

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Edition 1.2 July 1999 FLU10XM L-Band Medium & High Power GaAs FET Item Drain-Source Voltage V Gate-Source Voltage V Total Power Dissipation Storage Temperature Channel Temperature W Symbol VDS VGS PT Tstg Tch 4.16 -65 to +175 +175 Rating Tc = 25°C Condition Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with gate resistence of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Power Added Efficiency Thermal Resistance Symbol IDSS VGSO - 150 - - 300 450 -1.0 -2.0 -3.5 -5 - - 28.5 29.5 - 13.5 14.5 - - 47 - - 25 36 VDS = 5V, VGS=0V VDS = 5V, IDS=200mA VDS = 5V, IDS=15mA IGS = -15µA Channel to Case G.C.P.: Gain Compression PointCase Style: XM VDS = 10V f=2.0 GHz I DS=0.6IDSS mA mS V dB dBm V °C/W gm Vp P1dB G1dB ηadd Rth Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.

FEATURES

  • High Output Power: P1dB=29.5dBm (Typ.)
  • High Gain: G1dB=14.5dB (Typ.)
  • High PAE: ηadd=47% (Typ.)
  • Hermetic Metal/Ceramic (SMT) Package
  • Tape and Reel Available

DESCRIPTION

The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 0 50 100 150 200 204 6 8 1 0 Case Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (W) 100 300 200 Drain Current (mA) VGS =0V -0.5V -1.5V -2.0V -1.0V OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.6IDSS f = 2.0 GHz 81 0 1 2 1 4 1 6 1 8 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%)

L-Band Medium & High Power GaAs FET +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 SCALE FOR |S21| SCALE FOR |S12| .05 0.1 4268 25010025 50Ω

0.5 GHz

0.5 GHz 5

5 0.5 GHz VDS = 10V, IDS = 180mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLU10XM L-Band Medium & High Power GaAs FET 3.8±0.15 (0.150) 3.35 (0.132) 4.4±0.15 (0.173) 4.2±0.1 (0.165) 0.7 (0.028) 0.5 (0.020) 0.5 (0.020) 1.7±0.2 (0.067) 0.15±0.05 (0.006) Unit: mm(inches) 1. Gate 2. Source 3. Drain 2.865 (0.112) 3.13±0.15 2.265 (0.089) 2.0±0.15 4.0±0.15 (0.159) Case Style "XM" Metal-Ceramic Hermetic Package 45° 1 3 0.7 (0.028) 6.3 (0.248)