FLM6472-6F EUDYNA | Alldatasheet

Document overview

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Technical content

FEATURES

  • High Output Power: P1dB = 38.5dBm (Typ.)
  • High Gain: G1dB = 9.5dB (Typ.)
  • High PAE:ηadd = 37% (Typ.)
  • Low IM3 = -46dBc@Po = 27.5dBm
  • Broad Band: 6.4 ~ 7.2GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package Edition 1.2 August 2004 FLM6472-6F C-Band Internally Matched FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 31.2 -65 to +175 175 Tc = 25°C V V W PT Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with gate resistance of 100Ω. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Power-added Efficiency 3rd Order Intermodulation Distortion Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS - 2500 3750 - 2500 - -0.5 -1.5 -3.0 -5.0 - - 8.5 9.5 - -3 7 - 37.5 38.5 - VDS = 5V, IDS = 125mA VDS = 5V, IDS = 1625mA VDS = 5V, VGS = 0V IGS = -125µA VDS =10V, IDS = 0.65 IDSS (Typ.), f = 6.4 ~ 7.2 GHz, ZS=ZL= 50 ohm f = 7.2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 27.5dBm S.C.L. mA mS V dB -44 -46 - dBc dBm V gm Vp VGSO P1dB G1dB Drain Current - 1625 1900 mAIdsr IM3 ηadd Gain Flatness -- ±0.6 dB∆G Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Channel to CaseThermal Resistance - 4.0 4.8 °C/WRth 10V x Idsr x RthChannel Temperature Rise - - 80 °C∆Tch

DESCRIPTION

The FLM6472-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

C-Band Internally Matched FET POWER DERATING CURVE 500 100 150 200 Case Temperature (°C) Total Power Dissipation (W) OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 7.2 GHz f2 = 7.21 GHz 2-tone test 181614 20 22 24 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level 19 -55 -50 -45 -40 -35 -30 -25 -20 Output Power (S.C.L.) (dBm) IM3 Pout IM3 (dBc) OUTPUT POWER vs. FREQUENCY Pin=30dBm 28dBm 26dBm 24dBm Frequency (GHz) Output Power (dBm) VDS=10V P1dB OUTPUT POWER vs. INPUT POWER VDS=10V f = 6.8 GHz 2018 22 24 26 28 30 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%)

C-Band Internally Matched FET S-PARAMETERS VDS = 10V, IDS = 1625mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG 7.4 7.2 7.0 6.4 7.2 7.0 +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S120.2 0.1 SCALE FOR |S12| 25 250 SCALE FOR |S21| 12 3 4 7.4 7.4 6.6 6.6

6.2 GHz

6.4 6.4 6.8 6.8 7.0 7.2 7.2 7.4 6.6 6.6 6.2 GHz 6.8 6.8 6.4 7.0

C-Band Internally Matched FET 2-R 1.6±0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0±0.15 (0.669) 21.0±0.15 (0.827) 12.9±0.2 (0.508) 2.0 Min. (0.079) 2.0 Min. (0.079) 0.2 Max. (0.008) 1.45 (0.059) Case Style "IB" Metal-Ceramic Hermetic Package Unit: mm(inches) 1. Gate 2. Source (Flange) 3. Drain 5.2 Max. (0.205) 2.6±0.15 (0.102) 0.1 (0.004) Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Y okohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A.