FLM5972-12F EUDYNA | Alldatasheet

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Technical content

FEATURES

  • High Output Power: P1dB = 41.5dBm (Typ.)
  • High Gain: G1dB = 9.5dB (Typ.)
  • High PAE:ηadd = 37% (Typ.)
  • Low IM3 = -45dBc@Po = 30.5dBm
  • Broad Band: 5.9 ~ 7.2GHz
  • Impedance Matched Zin/Zout = 50Ω
  • Hermetically Sealed Package Edition 1.1 August 2004 FLM5972-12F C-Band Internally Matched FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 57.6 -65 to +175 175 Tc = 25°C V V W PT Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50Ω. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Power-added Efficiency 3rd Order Intermodulation Distortion Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS - 5000 7500 - 5000 - -0.5 -1.5 -3.0 -5.0 - - 8.5 9.5 - -3 7- 40.5 41.5 - VDS = 5V, IDS = 250mA VDS = 5V, IDS = 3250mA VDS = 5V, VGS = 0V IGS = -250µA VDS =10V, IDS = 0.65IDSS (Typ.), f = 5.9 ~ 7.2 GHz, ZS=ZL=50 ohm f = 7.2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L. mA mS V dB -42 -45 - dBc dBm V gm Vp VGSO P1dB G1dB Drain Current - 3250 3800 mAIdsr IM3 ηadd Gain Flatness -- ±0.8 dB∆G Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Channel to CaseThermal Resistance - 2.3 2.6 °C/WRth 10V x Idsr x RthChannel Temperature Rise -- 80 °C∆Tch

DESCRIPTION

The FLM5972-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 7.2GHz f2 = 7.21 GHz 2-tone test 17 19 23 21 25 27 29 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level 26 -50 -40 -30 -20 -10 Output Power (S.C.L.) (dBm) IM3 Pout IM3 (dBc) POWER DERATING CURVE 500 100 150 200 Case Temperature (°C) Total Power Dissipation (W) OUTPUT POWER vs. FREQUENCY Pin=34dBm 26dBm 28dBm 30dBm VDS=10V P1dB Frequency (GHz) Output Power (dBm) OUTPUT POWER vs. INPUT POWER VDS=10V f = 6.55 GHz 21 23 25 27 29 31 33 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%)

C-Band Internally Matched FET +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 25 250 SCALE FOR |S21| 5.7GHz 5.7GHz 5.8 5.8 6.0 6.0 6.2 6.2 6.4 6.4 6.6 6.6 6.86.8 7.0 7.0 7.2 7.2 7.4 7.4 0.1 0.2 1 2 3 4 5.7GHz 5.7GHz SCALE FOR |S12| 6.0 6.0 5.8 6.2 6.2 6.4 6.46.6 6.6 6.8 6.8 7.0 7.0 7.27.2 7.4 7.4 S-PARAMETERS VDS = 10V, IDS = 3250mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

C-Band Internally Matched FET 4-R 1.3±0.15 (0.051) 0.6 (0.024) 14.9 (0.587) 20.4±0.3 (0.803) 24±0.5 (0.945) 5.5 Max. (0.217) 2.4±0.15 (0.094) 0.1 (0.004) 1.4 (0.055) 17.4±0.3 (0.685) 8.0±0.2 (0.315) 2.0 Min. (0.079) 2.0 Min. (0.079) Case Style "IK" Metal-Ceramic Hermetic Package Unit: mm(inches) 1. Gate 2. Source (Flange) 3. Drain Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Y okohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A.