FLL600IQ-2C EUDYNA | Alldatasheet

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Technical content

Edition 1.0 February 2000 FLL600IQ-2C L-Band High Power GaAs FET

DESCRIPTION

The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use.

FEATURES

  • Push-Pull Configuration
  • High Power Output: 60W (Typ.)
  • High PAE: 51% (Typ.)
  • Broad Frequency Range: 2100 to 2200 MHz.
  • Suitable for class AB operation.

APPLICATIONS

  • Solid State Base-Station Power Amplifier.
  • W-CDMA and IMT 2000 Communication Systems. Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Power-Added Efficiency Thermal Resistance Symbol IDSS VGSO -6- -0.1 -0.3 -0.5 -5 - - 47.0 48.0 - 11.0 12.0 - - 51 - - 0.8 1.2 VDS = 5V, VGS = 0V VDS = 5V, IDS = 151mA IGS = -1.51mA Channel to Case VDS = 12V f = 2.17 GHz I DS = 1.5A Pin = 39dBm A V dB dBm V °C/W Vp Pout GL ηadd Drain Current - 9 13 AIDSR Rth Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) CASE STYLE: IU Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol V DS Tc = 25°C V V W VGS PT Tstg Tch Condition 125 -65 to +175 +175 Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.

L-Band High Power GaAs FET -50 ACP vs. OUTPUT POWER 35 3736 38 39 40 41 42 43 44 34 36 35 37 38 39 40 41 42 43 44 -55 -60 -65 -45 -40 -35 -30 -25 Output Power (dBm) ACP (dBc) VDS = 12V IDS = 1.5A fo = 2.14GHz W-CDMA Single Signal VDS = 12V IDS = 1.5A Wide Band Tuned OUTPUT POWER vs. FREQUENCY 34dBm 36dBm 38dBm 40dBm 32dBm 30dBm 28dBm 26dBm 24dBm 22dBm Frequency (GHz) -5MHz +5MHz -10MHz +10MHz -50 IMD vs. OUTPUT POWER -55 -60 -65 -45 -40 -35 -30 Output Power (dBm) IMD (dBc) VDS = 12V IDS = 1.5A f = 2.14GHz ∆f = 1MHz Wide Band Tuned +IM3 +IM5 OUTPUT POWER & ηadd vs. INPUT POWER VDS =12V IDS = 1.5A f = 2.17GHz Wide Band Tuned 20 24 28 32 36 40 Input Power (dBm) Output Power (dBm) Output Power (dBm) ηadd Pout ηadd (%)

L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 750mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FME, QDD (European Sales Office) Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI1199M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL600IQ-2C L-Band High Power GaAs FET Case Style "IQ" Unit: mm (inches) 8.0 (0.315) 1.9 (0.075) (0.685) 4-R1.3 (0.051) 16.4 (0.646) ±0.2 ±0.15 6.0 (0.236) ±0.2 20.4 (0.803) ±0.2 24.0 (0.945) ±0.2 ±0.2 ±0.2 2.0 (0.079) 1, 2: Gate 3: Source 4, 5: Drain ±0.13 2.4 (0.094) 4.4 Max. 0.1 (0.004)