FLL410IK-3C EUDYNA | Alldatasheet

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Technical content

L-Band High Power GaAs FET

FEATURES

・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) CASE STYLE: IK Edition 1.1 Oct 2003 1 FLL410IK-3C Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k Ω) Item Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature VDS VGS PT Tstg 100 -65 to +175 V V W oC Channel Temperature Tch 175 oC Linear Gain *1 LimitItem Symbol Test Conditions Unit Drain Current Output Power IDSS POUT A V dB dBm Min. Typ. Max. Drain Current Idsr V A -0.1 -0.3 -0.5 -5.0 - - 45.0 46.0 - 12.0 13.0 - - 5.9 7.6 VDS=12V f=2.6 GHz I DS=3A Pin=35.0dBm Power-added Efficiency ηadd %- 52 - - 4.0 -VDS=5V, VGS=0V Pinch-off Voltage Vp VDS=5V, IDS=110mA Gate-Source Breakdown Voltage VGSO IGS=-1.1mA GL Thermal Resistance Rth Channel to Case - 1.3 1.5 oC/W

DESCRIPTION

The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ESD Class Ⅲ 2000V ~ *１：GL is measured at Pin=22.0dBm RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25oC) Item Symbol Condition Unit DC Input Voltage Gate Current VDS IGF ≤12 V mA Limit RG=5Ω Operating Channel Temperature Tch ≤145 oC Gate Current IGR RG=5Ω ≤88 ≥-25 mA

Frequency [GHz] Output Power [dBm] VDS=12V, IDS(DC)=3A FLL410IK-3C OUTPUT POWER vs. INPUT POWER IMD vs. TOTAL OUTPUT POWER OUTPUT POWER , POWER ADDED EFFICIENCY vs. TOTAL INPUT POWER Pin=22dBm Pin=26dBm Pin=30dBm Pin=34dBm Pin=36dBm IM3 IM5 3A 5A 21 23 25 27 29 31 33 35 37 Input Power [dBm] Output Power [dBm] Power Added Efficiency[%] VDS=12V, IDS(DC)=3A, f=2.6GHz -60 -56 -52 -48 -44 -40 -36 -32 -28 -24 -20 24 26 28 30 32 34 36 38 40 42 44 Total Output Power [dBm] IMD [dBc] VDS=12V, f=2.6GHz, Df=5MHz L-Band High Power GaAs FET

■ S-PARAMETER VDS=12V, IDS=3.0A S11 S22 2. 6GHz 0 ∞ +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10Ω Freq [GHz] MAG ANG MAG ANG MAG ANG MAG ANG S11 S21 S12 S22 S12 S21 0.3 6±180° 0° -90° +90° Scale for |S21| Scale for |S12| 2.6GHz 2.6GHz L-Band High Power GaAs FET

■ BOARD LAYOUT(Reference) εr=3.5, t=0.6mm Unit : mm <INPUT SIDE> <OUTPUT SIDE> εr=3.5 εr=3.5 L-Band High Power GaAs FET

■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm FLL410IK-3C L-Band High Power GaAs FET

For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2004 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL410IK-3C FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. HONG KONG BRANCH Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 FUJITSU QUANTUM DEVICES LTD.

1000 Kamisukiahara, showa-cho

Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL: +81-55-275-4411 FAX: +81-55-275-9461 FUJITSU QUANTUM DEVICES LIMITED Business Development Division Hachioji Daiichi-Seimei Bldg., 11 th Floor 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 L-Band High Power GaAs FET