FLL357ME EUDYNA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Gate Source Breakdown Voltage Power-added Efficiency Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS - 1200 1800 - 600 - -1.0 -2.0 -3.5 -5 -- 10.5 11.5 - -4 6 - 34.5 35.5 - VDS = 5V, IDS = 60mA VDS = 5V, IDS = 800mA VDS = 5V, VGS = 0V IGS = -60µA Channel to Case VDS = 10V IDS ≈ 0.6IDSS (Typ.), f = 2.3GHz mA mS V dB dBm V gm Vp VGSO P1dB G1dB ηadd Thermal Resistance - 7.5 10 °C/WRth Test Conditions Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) G.C.P.: Gain Compression PointCASE STYLE: ME Edition 1.1 July 1999 FLL357ME L-Band Medium & High Power GaAs FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS -65 to +175 175 Tc = 25°C V V W Ptot Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with gate resistance of 100Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.

FEATURES

  • High Output Power: P1dB=35.5dBm (Typ.)
  • High Gain: G1dB=11.5dB (Typ.)
  • High PAE: ηadd=46% (Typ.)
  • Proven Reliability
  • Hermetically Sealed Package

DESCRIPTION

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 0 50 100 150 200 204 6 8 1 0 Case Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (W) 400 1200 800 Drain Current (mA) VGS =0V -0.5V -1.5V -2.0V -1.0V OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.6IDSS f = 2.3 GHz 16 18 20 22 24 26 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%)

+j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 SCALE FOR |S21| SCALE FOR |S12| 5 0.5 1.5

0.5 GHz

4.5 3.5 21 1 1.5 2.5 25025

5 GHz

426810050Ω .02 .04 .06 .08 FLL357ME L-Band Medium & High Power GaAs FET S-PARAMETERS VDS = 10V, IDS = 720mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL357ME L-Band Medium & High Power GaAs FET 2-Ø 2.2±0.15 (0.098) 1.0±0.15 (0.039) 0.1±0.05 (0.004) 1.65±0.2 (0.065) 12.0±0.15 (0.472) 9.0 (0.354) 16.0±0.15 (0.630) 5.0 (0.197) 2.0 Min. (0.079) 2.0 Min. (0.079) 4.0 Max. (0.157) 1.2 (0.048) 5.0 (0.197) +0.1 -0.15 Case Style "ME" Metal-Ceramic Hermetic Package Unit: mm(inches) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) 24 3