FLL300IL-1 EUDYNA | Alldatasheet

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Edition 1.2 July 1999 FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS 100 -65 to +175 175 Tc = 25°C V V W PT Tstg Tch Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Drain Current Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Symbol IDSS -1 2 1 6 - 6000 - -1.0 -2.0 -3.5 -5 -- 10.0 12.0 - - 6.0 8.0 43.0 44.5 - VDS = 5V, IDS = 720mA VDS = 5V, IDS = 7200mA VDS = 5V, VGS = 0V IGS = -720µA VDS = 10V IDS = 0.5 IDSS (Typ.) VDS = 10V IDS = 0.5 IDSS (Typ.) A mS V dB 11.0 13.0 - dB 8.0 10.0 - dB A dBm V gm Vp VGSO P1dB FLL300IL-1 FLL300IL-2 FLL300IL-3 G1dB Idsr Power added Efficiency -4 4 - % Rth Test Conditions* Unit Limit Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Thermal Resistance - 1.1 1.5Channel to Case (10V x Idsr - Pout + Pin) x Rth °C/W ηadd Channel Temperature Rise -- 8 0 °C∆Tch * Under fixed VGS bias condition CASE STYLE: IL FLL300IL-1 FLL300IL-2 FLL300IL-3 f=900MHz f=1.8GHz f=2.6GHz f=900MHz f=1.8GHz f=2.6GHz G.C.P.: Gain Compression Point

FEATURES

  • High Output Power: P1dB = 44.5dBm (Typ.)
  • High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)
  • High PAE: ηadd = 44% (Typ.)
  • Proven Reliability
  • Hermetically Sealed Package

DESCRIPTION

The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 100 120 0 50 100 150 200 204 6 8 1 0 Case Temperature (°C) Drain-Source Voltage (V) Total Power Dissipation (W) Drain Current (A) VGS =0V -0.5V -1.5V -2.0V -1.0V

L-Band Medium & High Power GaAs FET OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.5 IDSS f = 0.9 GHz 23 25 27 29 31 33 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%) +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 12 1.5GHz 1.5GHz 1.5GHz 1.5GHz 1.0 1.3 1.0 1.01.0 .02 .01 25050Ω 10010 25 SCALE FOR |S21| SCALE FOR |S12| 0.5GHz 0.5GHz 0.5GHz S-PARAMETERS VDS = 10V, IDS = 6000mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

L-Band Medium & High Power GaAs FET +j250 +j100 +j50 +j25 +j10 1.2 1.4 2.0 1.2 1.6 1.8 1.6 2.2 2.0 1.82.4 2.4 2.6 2.8 3.0 3.0 2.8 1.8 2.0 2.2 2.4 2.6 2.8 2.0 2.2 2.4 2.6 2.8 1.2 1.2 3.03.0 1.8 1.6 1.4 1.6 2.6 2.2 -j10 -j25 -j50 -j100 -j250 S11 S22 ±180° +90°C -90°C S21 S12 0.2 0.1 1234525010010 25 50Ω SCALE FOR |S21| SCALE FOR |S12| OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.5 IDSS f = 1.8 GHz 24 26 28 30 32 34 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%) S-PARAMETERS VDS = 10V, IDS = 6000mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

L-Band Medium & High Power GaAs FET OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.5 IDSS f = 2.6 GHz 26 28 30 32 34 36 Input Power (dBm) Output Power (dBm) ηadd Pout ηadd (%) +j250 +j100 +j50 +j25 +j10 -j10 -j25 -j50 -j100 -j250 S11 S22 180° +90° -90° S21 S12 1234 1.5GHz 1.5GHz 2.5 2.5 3.5 3.5 3.0 3.0 2.0 3.0 3.0 2.0 2.0 2.5 2.5 3.5 3.5 1.5 1.5 .02 .03 .04 .01 10 25 SCALE FOR |S21| SCALE FOR |S12| 50Ω 100 250 S-PARAMETERS VDS = 10V, IDS = 6000mA FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET 4-R 1.3±0.15 (0.051) 1.0 (0.039) 16.4 (0.646) 20.4±0.2 (0.803) 24±0.2 (0.945) 5.5 Max. (0.217) 2.4±0.15 (0.094) 0.1 (0.004) 1.9 (0.075) 17.4±0.25 (0.685) 8.0±0.15 (0.315) 2.0 Min. (0.079) 2.0 Min. (0.079) Case Style "IL" Metal-Ceramic Hermetic Package Unit: mm(inches) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) 4 2