FLL1200IU-3 EUDYNA | Alldatasheet

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Technical content

Edition 1.4 December 1999 FLL1200IU-3 L-Band High Power GaAs FET

DESCRIPTION

The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use.

FEATURES

  • Push-Pull Configuration
  • High Power Output: 120W (Typ.)
  • High PAE: 44%.
  • Broad Frequency Range: 2400 to 2500 MHz.
  • Suitable for class AB operation.

APPLICATIONS

  • Solid State Base-Station Power Amplifier.
  • WLL Communication Systems. Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Power-Added Efficiency Thermal Resistance Symbol IDSS VGSO -2 4 - -4 8- -1.0 -2.0 -3.5 -5 - - 49.8 50.8 - 10.0 11.0 - - 44 - - 0.6 0.8 VDS = 5V, VGS = 0V VDS = 5V, IDS = 28.8A VDS = 5V, IDS = 2.88A IGS = -2.88mA Note 1 Channel to Case Note 1: The device shall be measured at a constant VGS condition. VDS = 12V f = 2.5 GHz I DS = 5.0A Pin = 41.0dBm A S V dB dBm V °C/W gm Vp Pout GL ηadd Drain Current - 20 30 AIDSR Rth Conditions Unit Limits Typ. Max.Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) CASE STYLE: IU Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol V DS Tc = 25°C V V W VGS PT Tstg Tch Condition 187.5 -65 to +175 +175 Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (T ch) should not exceed 145°C.

L-Band High Power GaAs FET OUTPUT POWER & ηadd vs. INPUT POWER 26 28 30 32 34 36 38 40 42 Input Power (dBm) Output Power (dBm) ηadd (%) VDS = 12V IDS = 5.0A f = 2.5GHz Pout ηadd VDS = 12V IDS = 5A OUTPUT POWER vs. FREQUENCY 27dBm 31dBm 35dBm 39dBm 41dBm Pin=42dBm Frequency (GHz) Output Power (dBm) POWER DERATING CURVE 100 150 200 0 50 100 150 200 Ambient Temperature (°C) Total Power Dissipation (mW)

L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 2.5A FREQUENCY S11 S21 S12 S22 (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. VDS = 12V IDS = 5.0A f = 2.5GHz ∆f = 1.0MHz 2-tone test OUTPUT POWER vs. IMD 33 35 37 39 41 43 45 -40 -55 -60 -50 -45 -35 -30 -25 Total Output Power (dBm) IMD (dBc) IM3 IM5

For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0299M200 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put these products into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL1200IU-3 L-Band High Power GaAs FET Case Style "IU" 8.0±0.15 (0.315) 15.5±0.15 (0.610) (0.685) 0.7±0.2 4-R1.3 12-R0.5 10.0±0.2 (0.393) 23.9±0.25 (0.941) 34.0±0.25 (1.339) 30.4±0.25 (1.181) 2.4±0.15 (0.094) 1.9±0.15 (0.075) 4.5 Max. (0.177) 0.1 (0.004) 2.0 (0.078) Unit: mm (inches) 1, 2: Gate 3: Source 4, 5: Drain 6: Source