FLD5F15CX-A

FLD5F15CX-A EUDYNA | Alldatasheet

Document overview

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Technical content

Edition 1.1 July 2004 1,550nm DWDM Direct Modulation DFB Laser

FEATURES

• Direct Modulated DFB Laser for WDM systems
• Optimized for Long Distance Transmission (Dispersion 3200ps/nm)
• Peak wavelength 1527.99 to 1563.05nm (C Band: 191.8 to 196.2THz, 100GHz spacing)
• Output Power: 10mW
• 14-pin Butterfly type package
• Power monitor PIN-PD (InGaAs), Thermistor, cooler
• Built-in optical isolator
• Single mode fiber

APPLICATIONS

This laser is intended for the application of 2.5 Gb/s long haul Dense Wavelength Division Multiplexing (DWDM). Transmission spans of 3200ps/nm are possible.

DESCRIPTION

This high power laser is capable of 2.5 Gb/s transmission. It is packaged in a “butterfly” type module. The module employs a high efficiency optical coupling system, coupling the laser output through a built-in optical isolator into a single mode fiber pigtail. The module also includes a monitor photodiode, a thermoelectric cooler (TEC), and thermistor. This device is designed for use in DWDM direct modulation transmission systems. Selected wavelengths specified to the ITU-T grid are available. Parameter LD Forward Current Cooler Voltage Symbol Condition IF Photodiode Reverse Voltage VDR Vc 150 2.5 Ratings mAPhotodiode Forward Current IPF 20 V V Optical Output Power Pf 12.0CW CW mW mA LD Reverse Voltage VR 2 V Unit ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Cooler Current Ic A 260°CLead Soldering Time Tsold 10 sec ATC OperationThermistor Temperature Tth +70 °C Environmental Operating Humidity Environmental Storage Humidity Xop % Storage Temperature Tstg +85- Cooling -Heating 1.4Cooling -Heating Operating Case Temperature Top +70 -20 -40 -2.5 -0.9 -20 °C Xst Top<30°C Tstg<30°C Min. Max. FLD5F15CX-A

OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=Tset, Tc=25°C, BOL, unless otherwise specified) Conditions UnitMin. Limits Peak Wavelength λp Note (2) Note (4) nm Series Resistance Rs Ω22 28CW, pin 12, 13 25 Laser Set Temperature Tset - °C20 35 - Optical Output Power Pf CW mW -10.0 - Slope Efficiency η CW, Pf=10mW mW/mA -0.14 - Threshold Power Pth CW, IF=Ith µW150-- Monitor Current Im CW, Pf=10mW, VDR=5V mA2.50.25 - Tracking Error (Note 1) TE Im-APC, T c=-20 to 70°Cd B +0.5-0.5 - Photodiode Dark Current ID VDR=5V nA100-2 Photodiode Capacitance Ct VDR=5V, f=1 MHz pF10-- Photodiode Cutoff fcm VDR=5V, 50Ω load MHz-100 - Side Mode Suppression Sr Note (2) dB -35 40 Rise/Fall Time Tr, Tf 20% to 80% nsec 0.125-- Spectral Width (-20dB) δλ Note (2) nm 0.3-- Wavelength Stabilty with Case Temperature dλ/dTc Tc=-20 to +70°C pm/°C-1.0 - +1.0 Wavelength Drift Note (2), after 20 years∆λ pm+100-100 - Cutoff Frequency fc Pf=10mW, -3 dB GHz-3.5 - Threshold Current Ith CW mA 44 0 - Forward Voltage VFDC CW, IF=30 mA, pin 12, 13 V- 1.6 1.75 Max.Typ. f=50 MHz to 2 GHz dB8- - RF Return Loss S11 f=2 GHz to 3 GHz f=3 GHz to 5 GHz dB dB 1,550nm DWDM Direct Modulation DFB Laser

B TL=Tset, Pf=10mW, Tc=70°C TL=25°C Test Conditions A V W K kΩ Unit Pc Limit 1.0 2.4 2.4 10.5 Max.Typ. 9.5 10.0 36303270 3450 Min. Cooler Current Relative Intensity Noise RIN f=2.5 GHz Pf=10 mW, ORL=24 dB dB/Hz-140-- dBPower Penalty PP Note (2) 2.0-- Optical Isolation Is Tc=-20 to 70°C dB-25 35 Kink Kns - No Kinkup to 12mW Note 1. TE=10*log{Pf(Tcase)/Pf(Tc=25 °C)} (dB) Note 2. 2.5 Gb/s NRZ, Ppeak=10.0mW, Rext=8.2dB, PRBS=2 23-1, Note 3. Bit rate=2.48832 Gb/s, PRBS=2 23-1, Dispersion=3200ps/nm, Ppeak=10mW, Rext=8.2dB (min.) Receiver: Eudyna Standard Receiver Note 4. The selected wavelengths available are listed in Fig. 8 OPTICAL AND ELECTRICAL CHARACTERISTICS (TL=Tset, TL: Laser Temperature, Tc=25°C, BOL, unless otherwise specified) Fig. 1 Forward Current vs Output Power Forward Current, If (mA) Output Power, Pf (mW) 03 0 6 0 9 0 Fig. 2 Frequency Response Frequency (GHz) Relative Output (dB) -12 01 234 5 Pf=10mW TL = 25°C 1,550nm DWDM Direct Modulation DFB Laser

Fig. 4 Cooler Voltage -Current Case Temperature (°C) Cooler Voltage (V) Cooler Current (A) -1.0 3.0 2.0 0.0 1.0 -1.0 3.0 2.0 0.0 1.0 02 0 3 010 40 50 60 Ic Vc 70 80 Fig. 3 RF Return Loss Frequency (GHz) Return Loss (dB) -10 -20 -30 012 3 4 5 Fig. 5 Spectrum Wavelength λ (nm) Relative Intensity (dB) -10 -40 -50 -60 -20 -30 1540 1550 1560 Fig. 6 Temperature Dependance of Wavelength (ACC Operation) Laser Temperature, TL (°C) Wavelength (nm) 1550 1551 1552 1553 1554 10 20 30 1,550nm DWDM Direct Modulation DFB Laser

Fig. 7 Transmission Characteristics Average Received Optical Power (dBm) Bit Error Rate 10-12 10-10 10-8 10-6 10-4 -37 -33 -29 -25 2.5Gb/s, NRZ, PRBS=223-1, Pave=7dBm, Rext ≥ 9dB, Dispersion penalty ≤ 2dB@10 -10 Fig. 8 Wavelength Table Part Number FLD5F15CX-A9620 -A9610 -A9600 -A9590 -A9580 -A9570 -A9560 -A9550 -A9540 -A9530 -A9520 -A9510 -A9500 -A9490 -A9480 -A9470 1527.99 1528.77 1529.55 1530.33 1531.12 1531.90 1532.68 1533.47 1534.25 1535.04 1535.82 1536.61 1537.40 1538.19 1538.98 1539.77 1540.56 1541.35 1542.14 1542.94 1543.73 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 Wavelength (nm) (TL=Tset) (in vacuum) Tolerance (nm) -A9460 -A9450 -A9440 -A9430 -A9420 1544.53 1545.32 1546.12 ±0.1 ±0.1 ±0.1 -A9410 -A9400 -A9390 -A9380 -A9370 -A9360 -A9350 -A9340 -A9330 -A9320 -A9310 -A9300 -A9290 -A9280 -A9270 -A9260 -A9250 -A9240 -A9230 -A9220 -A9210 -A9200 -A9190 -A9180 1546.92 1547.72 1548.51 1549.32 1550.12 1550.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.55 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 Back to Back After Transmission (3200ps/nm) 1,550nm DWDM Direct Modulation DFB Laser

20.83±0.25 22.0±0.25 26.04±0.25 PIN 8 4-Ø 2.67 PIN 1 29.97±0.25 25.0±0.5 PIN 14 14-0.5 5.4±0.5 15.24±0.25 17.24±0.25 2.54 Grounded Type 1. Thermistor 2. Thermistor 3. Laser DC Bias (-) 4. Monitor (Anode) 5. Monitor (Cathode) 6. Thermoelectric Cooler (+) 7. Thermoelectric Cooler (-) 8. Case Ground 9. Case Ground 10. N.C. 11. Case Ground 12. Laser Modulation (-) 13. Case Ground 14. N.C. PIN # FUNCTION 15.2±0.3 5.08±0.15 Ø 0.9±0.1 12.7±0.25 8.89±0.15 Ø 5.2±0.25 4.15±0.25 5.47±0.2 1.70 0.5 8.17±0.25 1.70±0.15 0.5±0.2 CONNECTOR 8 9 10 11 12 13 14 1234567 TEC “CX” PACKAGE UNIT: mm Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Y okohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. 1,550nm DWDM Direct Modulation DFB Laser