FLD3F10NP-A EUDYNA | Alldatasheet

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Technical content

Edition 1.3 July 2004 FLD3F10NP-A

FEATURES

  • Modulator Integrated DFB Laser Diode Module
  • CW operation of DFB laser section
  • Modulation voltage applied only to modulator section
  • High speed butterfly package with GPO connection
  • Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler APPLICATION This MI laser is intended for intermediate reach applications (≤24km) at 10Gb/s.

DESCRIPTION

The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of more than 8.2 dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermoelectric cooler. Parameter Symbol Storage Temperature Tstg +85- °C-40 Operating Case Temperature +70- °CTop 0 Optical Output Power 5CW mWPf - Laser Forward Current 150CW mAIF - Laser Reverse Voltage 2CW VVR - Modulator Forward Voltage +1CW VVm -5 Photodiode Forward Current 1-m A-- 10-VPhotodiode Reverse Voltage VDR - 10260°C secLead Soldering Time -- TEC Voltage +2.5Cooling -Heating VVc -2.0 TEC Current +1.4Cooling -Heating AIc - -0.7 Thermistor Temperature +700ATC Operation °CTth Rating UnitMin. Max. ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified) Condition 1,310nm Modulator Integrated DFB Laser

OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise specified) Note (1) Eudyna Test System 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=82ps/nm, Dispersion penalty at Bit Error Rate = 1.0E-10 Note (2) Eudyna Test System 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) UnitLimits Max.TypeMin.Test Condition Dispersion Penalty dP dB 1.0--Note (1) Sidemode Suppression Ratio SSR dB -30 -Note (2) Peak Wavelength λp nm1320-1290Note (2) Fall Time Tf ps25--Note (2), 20 to 80% Rise Time Tr ps25--Note (2), 20 to 80% RF Return Loss S11 dB8- -f=DC-5GHz, 50Ω Test Set, Vm=-1V, IF=Iop RF Return Loss S11 dB5- -f=5-10GHz, 50Ω Test Set, Vm=-1V, IF=Iop Cut-off Frequency S21 GHz10 - --3dB bandwidth, Vm=-1V, IF=Iop Optical Output Power (Avg. Power) Pf dBm 2.00.0 -Note (1) Forward Voltage VF V- 2.2 -CW, IF=Iop, Vm=Vo TEC Power Dissipation Pc W2.9--IF=Iop TL=25°C Threshold Current Ith mA-3 5 -CW, Vm=Vo Threshold Power Pth µW-7 5 -CW, IF=Ith, Vm=Vo On Level Modulation Vo V-1.0 0 -- Modulator Drive Voltage Vmod Vpp- 2.6 -(Vo-Vmod)≥-3.3V Monitor Current Im mA- 2.00.2VDR=5V, Note (2) Operating Current Iop mA50 100 -CW, Vm=Vo Extinction Ratio Rext dB--8.2f=10Gb/s, IF=Iop, Vm=Vo/(Vo-Vmod) Optical Isolation Isd B -23 35Tc=0 to +70°C TEC Capacity ∆T °C-45 -PTEC=2.4W, IF=Iop TEC Current Ic A1.2--IF=Iop, ∆T=45°C TEC Voltage Vc V2.4--IF=Iop, ∆T=45°C Thermal Resistance Rth kΩ10.59.5 - Thermistor B Constant BK 3,6303,270 3,450 1,310nm Modulator Integrated DFB Laser

Fig. 3 Extinction Ratio vs. Modulation Voltage Fig. 4 Cut-off Frequency (S21) Frequency (GHz) Modulation Voltage (V) Minus Extinction Ratio (dB) Relative Output (dB) -10 -15 -20 -25 51 0 1 52 00 -12 Fig. 5 RF Return Loss (S11) Frequency (GHz) Return Loss (dB) 51 01 52 00 -40 -30 -20 -10

10 Gb/s

PRBS=223-1 IF=Iop Vm=Vo/(Vo-2) Vo=-0.3V TLD=+25°C Pf Im Fig. 1 Lasing Spectrum Wavelength (Span=1 nm/div, Res.=0.1nm) Fig. 2 Output Pwer & Monitor Current vs. Forward Current Forward Current, IF (mA) Output Power, Pf (mW) Monitor Current (mA) 20 40 60 80 10000 1.5 2.0 1.0 0.5 Relative Intensity (10 dB/div.) 1,310nm Modulator Integrated DFB Laser

25.0±0.5 29.97±0.25 5.08±0.25 17.24±0.25 15.24±0.25 2.54±0.20 7-0.5 PIN 1 4-ø2.67±0.2 PIN 7 8.17±0.25 26.04±0.25 20.83±0.25 ø4.16 10.0±0.25 1.25 12.7±0.25 8.25±0.20 ø0.9±0.1 ø5.2±0.25 8.89±0.15 # PIN DESIGNATIONS

1 Thermistor

2 Thermistor

3 LD Anode

4 Power Monitor Anode

5 Power Monitor Cathode

6 Thermoelectirc Cooler (+)

7 Thermoelectric Cooler (-)

8 Modulator Anode (-)

22.00±0.25 PIN 8 * Pigtail length (L) and connector type are specified in the detail (individual) specification. Case Ground: LD Cathode 4.83±0.20 0.5±0.2 5.47±0.2 CONNECTOR TEC TH 10KΩ 50Ω 54 3 21 TOP VIEW “NP” PACKAGE UNIT: mm 1,310nm Modulator Integrated DFB Laser Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: CAUTION

  • Do not put this product into the mouth.
  • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
  • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Y okohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A.