F0100106B EUDYNA | Alldatasheet

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Technical content

♦ Features

  • Low voltage of +3.3 V single power supply
  • 15.5 kΩ high transimpedance
  • Typical 250 MHz broad bandwidth
  • 31.5 dB high gain
  • 0 dBm large optical input
  • Over 35 dB wide dynamic range
  • Differential output

Applications

  • Preamplifier of an optical receiver circuit for OC-3/STM-1 (156 Mb/s) ♦♦♦♦♦ Functional Description The F0100106B is a stable GaAs integrated transimpedance amplifier capable of 31.5 dB gain at a typical 250 MHz 3 dB-cutoff-frequency, making it ideally suited for a 156 Mb/s optical receiver circuit, for example, OC-3/STM-1, instrumentation, and measurement appli- cations. The integrated feedback loop design provides broad bandwidth and stable opera- tion. The F0100106B typically specifies a high transimpedance of 15.5 k Ω (Rs=RL=50Ω) with a wide dynamic range of over 35 dB. It also provides a large optical input overload of more than 0 dBm. Furthermore, it can operate with a low supply voltage of single +3.3 V. It features a typical dissipation current of 24 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifi- ers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package. 01.08.28 Transimpedance Amplifier F0100106B

3.3 V / 156 Mb/s Receiver

3.3 V / 156 Mb/s Transimpedance Amplifier F0100106B

♦♦♦♦♦ Absolute Maximum Ratings Ta=25 °C, unless specified ♦♦♦♦♦ Recommended Operating Conditions Ta=25 °C, VDD=+3.3 V, VSS=GND, unless specified ♦♦♦♦♦ Electrical Characteristics Ta=25 °C, VDD=3.3 V, VSS= GND, unless specified retemaraPl obmySs noitidnoCtseT eulaV stinU .niM. pyT. xaM tnerruCylppuSI DD CD0 .810 .530 .54A m )evitisoP(niaGS P12 ,zHM1=fmBd05-=NIP 05=LR Ω 5.925 .130 .53B d )evitagen(niaGS N12 ,zHM1=fmBd05-=NIP 05=LR Ω 5.925 .130 .53B d ffo-tuCycneuqerFhgiHBd3- )evitisop(F PC 05=LRmBd05-=NIP Ω 5510 520 05z HM ffo-tuCycneuqerFhgiHBd3- )evitagen(F NC 05=LRmBd05-=NIP Ω 5510 420 05z HM ecnadepmItupnIR I zHM1=f0 550 570 09 Ω )evitisop(ecnadepmI-snarTZ PT zHM1=f,1*5 .215 .51- K Ω )evitagen(ecnadepmI-snarTZ NT zHM1=f,1*5 .215 .51- K Ω )evitisop(egatloVtuptuOV PO CD4 .13 .29 .2V )evitagen(egatloVtuptuOV NO CD6 .14 .29 .2V egatloVtupnIV I CD0 7.03 9.01 .1V retemaraPl obmySe ulaVs tinU egatloVylppuSV DD V SS Vot5.0- SS 0.4+V tnerruCylppuSI DD 05A m erutarepmeTgnitarepOtneibmAT a 09+ot04-C ° erutarepmeTegarotST gts 521+ot05-C ° retemaraPl obmyS eulaV stinU .niM. xaM egatloVylppuSV DD 9.26 .3V erutarepmeTgnitarepOtneibmAT a 05 8C ° *1 ZTP , N = (RI+50) ×10 S21P,N

♦♦♦♦♦ Die Pad Description OUT OUT VDD VSS IN Level Shift Buffer Variable Feedback Resistance VDD VSS IN OUT OUT Supply Voltage Supply Voltage Input Output Output

♦♦♦♦♦ Die Pad Assignments (3) (4) (5)(2)(1) (6) (7) (8) (9)(10)(11)(12) (14) (16) (15) (13) .oNl obmyS( setanidrooCretneC µ )m. oNl obmyS( setanidrooCretneC µ )m

1) AC Characteristics 2) Sensitivity Characteristics E/O Converter Optical Attenuater Bit Error Rate Tester PD Pulse Pattern Generator Comparator SEI F0300232Q V PD VCC 3.3V 3.3V CLK 0.022µF 0.022µF 0.022µFDUT 50Ω50Ω 50Ω Network Analyzer Prober OUT OUT VDD VSS IN DUT Switch Pin=-50 dBm f=300 kHz~3 GHz

♦♦♦♦♦ Examples of AC Characteristics (1) Gain (S21P) Ta=25 °C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz (2) Gain (S21N) Ta=25 °C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 Ω, 300 kHz-3 GHz 1M 10M 1G 100M Frequency[Hz] Gain[dB] 1M 10M 1G 100M Frequency[Hz] Gain[dB]

(3) Input Noise Current Density & Transimpedance INPUT NOISE CURRENT DENSITY & TRANSIMPEDANCE(Typical Vaiues) Freq. (MHz) Zt(Ω) (RF transimpedance) Ini(pA/√Hz) (Equivalent input noise currentdensity) 100 200 300 400 500 600 700 800 900 1000 19817 19327 19507 19128 17953 16876 10915 6620 4378 2748 1874 1157 957 750 587 0.76 0.72 0.79 0.92 0.93 1.01 1.63 2.17 2.84 3.63 4.34 6.51 5.42 6.23 7.30

♦♦♦♦♦ Typical Bit Error Rate PRBS 223-1, Ta=25 °C, VDD=3.3 V, VSS=GND, RL=50 Ω Optical Input Power (dBm) 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 Bit Error Ratio 25 °C/3.0V 25 °C/3.3V 25 °C/3.6V

♦♦♦♦♦ General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, band- width, and so on, obtained by this transimpedance amplifier strongly depend on the capaci- tance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for cus- tomers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection be- tween a PD and a transimpedance, noise should be taken into consideration. Low Voltage Operation The F0100106B features a single 3.3 V supply operation, which is in great demand re- cently, because most of logic IC’s operate with the supply voltage of 3.3 V. The analog IC’s with a single 3.3 V supply for use in fiber optic communication systems are offered by only SEI. Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. Noise Performance The F0100106B based on GaAs FET’s shows excellent low-noise characteristics com- pared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100106B is the best

choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. ♦♦♦♦♦ Die-Chip Description The F0100106B is shipped like the die-chip described above. The die thickness is typically 280 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. ♦♦♦♦♦ Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wire- pull and die-shear strength. The heating time of one minute at the temperature of 310 °C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to die- shipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s au- thorized rules. A microscope inspection is conducted in conformance with the MIL-STD- 883C Method 2010.7. Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100106B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equip- Electron Device Department