ESN26A030MK EUDYNA | Alldatasheet
Document overview
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Technical content
FEATURES
・High Voltage Operation : VDS=50V ・High Power : 46.5dBm (typ.) @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Condition Rating Unit Drain-Source Voltage VDS 120 V Gate-Source Voltage VGS Tc=25oC -5 V Total Power Dissipation Pt 75 W Storage Temperature Tstg -65 to +175 oC Channel Temperature Tch 250 oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Limit Unit min. Typ. Max. Pinch-Off Voltage Vp VDS=50V IDS=11mA -1.0 -2.0 -3.5 V Gate-Drain Breakdown Voltage VGDO IGS=- 5.6 mA - -350 - V 3dB Gain Compression Power P3dB VDS=50V TBD 46.5 - dBm Drain Efficiency ηd IDS(DC)=200mA - 60 - % Linear Gain GL f=2.6GHz TBD 15.0 - dB Thermal Resistance Rth Channel to Case - 2.5 3.0 oC/W Edition 1.2 Dec. 2005 1 RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol Condition Limit Unit DC Input Voltage VDS 50 V Forward Gate Current IGF RG=15 Ω <TBD mA Reverse Gate Current IGR RG=15 Ω >-2.2 mA Channel Temperature Tch 200 oC ES/EGN26A030MK High Voltage - High Power GaN-HEMT Preliminary Eudyna GaN-HEMT 30W
Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=200mA f=2.6GHz Power Derating Curve High Voltage - High Power GaN-HEMT ES/EGN26A030MK Frequency [GHz] Output Power [dBm] Pin=20dBm Pin=24dBm Pin=28dBm Pin=32dBm Pin=36dBm 19 21 23 25 27 29 31 33 35 37 Input Power [dBm] Output Power [dBm] 100 Drain Effciency [%] 0 50 100 150 200 250 300 Case Temperature [ oC] Total Power Dissipasion [W] Edition 1.2 Dec. 2005 2
High Voltage - High Power GaN-HEMT ES/EGN26A030MK Edition 1.2 Dec. 2005 S-Parameters @VDS=50V, IDS=200mA, f=1 to 4 GHz, Zl = Zs = 50 ohm Freq [GHz] MAG ANG MAG ANG MAG ANG MAG ANG S11 S21 S12 S22 S11 2.6GHz 2.6GHz 50Ω 0 ∞ +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10Ω 25Ω S22 S11 0.06 S12 S21 ±180° 0° -90° +90° Scale for |S21| Scale for |S12| 2.6GHz 2.6GHz
Metal-Ceramic Hermetic Package PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 High Voltage - High Power GaN-HEMT ES/EGN26A030MK