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50V-1000V 3.0A ES3A THRU ES3M 1000800 700560 1000800 MKJGDB A MAKO SEMICONDUCTOR1 of 2
FEATURES
TINGS AND ELECTRICAL CHARACTERISTICS Lo w cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 Case:JEDECDO-214AA,molded plastic Terminals:Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21grams Mounting position: Any SUR FA CE MOUNT R ECT IFIER Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL ES3 ES3 ES3 ES3 ES3 UNIT MaximumRecurrent PeakReverseVoltage VRRM 50 100 200 400 600 V MaximumRMS Voltage VRMS 35 70 140 280 420 V MaximumDC Blocking Voltage VDC 50 100 200 400 600 V MaximumAverage Forward Rectified Current @TA=55 ℃ Peak ForwardSurge Current 8.3ms Single Half Sine-Wave Super Imposedon Rated Load(JEDECMethod) Peak ForwardVoltage at 3.0ADC VF 1.25 1.70 V MaximumDC ReverseCurrent @TJ=25℃ at RatedDC Blocking Voltage @TJ=100℃ MaximumReverseRecoveryTime(Note 1) TRR nS Typical Junction Capacitance(Note2) CJ pF Typical Thermal Resistance (Note3) R JA ℃/W Operating TemperatureRange TJ ℃ StorageTemperatureRange TSTG ℃ 0.95 4570 100 A 125IFSM A I(AV) 3.0 2.Measuredat 1.0 MHz and appliedreversevoltage of4.0V DC 3.Thermalresistance junction to ambient. NOTES: 1.Measured with IF=0.5A, IR=1A, IRR=0.25A -55 to +150 -55 to +150 μAIR 5.0 ES3 ES3 MAKO SEMICONDUCTOR.,CO.LTD
TINGS AND CHARACTERISTIC CURVES ES3A THRU ES3M MAKO SEMICONDUCTOR 2 of 2 PERCENT OF RATED PEAK REVERSE VOL TAGE, (% ) FIG.4 - TYPIC AL REVERS E CHA RACTERISTICS INS TANTANEOUSREVERSE CURRENT, (uA) 20 40 12 0 14 00 0.1 1.0 10 00 100 60 80 10 0 TJ = 2 5 C TJ = 125 C FI G.1 - FORWARD CURRENT DERA TI NG CURVE AVERAG E FORWARD CURRENT AM PERES 20 60 80 100 12 0 0.8 0.4 14 0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 1.0 0.6 0.2 L EAD TEM PERATURE , C 160 I NSTANTANEOUS F ORWARD VOL TAGE, VOL TS FIG.3 - TYPICAL FORWARD CHAR ACTERI S TICS I NSTANTANEOUS FORWARD CURRENT, (A) 0.8 1.0 1. 80.6 0.1 1.0 1.2 1.4 1. 6 .01 TJ = 25 C PULSEWIDTH:300us ES3AB-ES3DB ES3GB ES3JB 0 0.2 0.4 PEAK FORWARD SU RGE CURRENT, AMPERES FIG.2 - MAXI MUM NON-REPETITIVE SU RGE CURRENT NUM BER OF CYCLES AT 60Hz 1 51 0 50 1002 20 100 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 50V-1000V 3.0A ES3A THRU ES3M SUR FA CE MOUNT R ECT IFIER MAKOSEMICONDUCTOR.,CO.LTD