EPD-660-3-0.5 EPIGAP | Alldatasheet

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Preliminary 6/21/2007 rev. 03/07 Wavelength Red Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.17 mm² Temperature coefficient of I D TC (I D ) 4 %/K Tamb -20 to +85 ° C Tstg -40 to +100 ° C Tsld 260 ° C ϕ 60 deg. Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage 1) IR = 10 µA V R 5 V Dark current VR = 1 V I D 40 200 pA Peak sensitivity wavelength VR = 0 V λp 660 nm Responsivity at λP VR = 0 V Sλ 0.42 A/W Sensitivity range at 1% 1) VR = 0 V λmin , λmax 605 705 nm Spectral bandwidth at 50% VR = 0 V Δλ 0.5 80 nm Shunt resistance VR = 10 mV R SH 500 670 G Ω Noise equivalent power λ = 660 nm NEP 8.5x10 -15 Specific detectivity λ = 660 nm D* 4.8x10 12 Junction capacitance VR = 0 V C J 50 pF Switching time (R L = 50 Ω) V R = 1 V t r, t f 15/30 ns Photo-current at illuminant A 1,2) VR = 0 V Ev = 1000 lx IPh 0.33 µA 1) for information only 2) Standard light source with a color temperature of 2856 K Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° EPD-660-3-0.5 Note: Special packages without standoff available on request

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Description

Selective photodiode mounted in standard 3 mm package with standoff . Narrow response range (660 nm peak) by means of integrated filter Active area Acceptance angle at 50% S λ Operating temperature range Storage temperature range Soldering Temperature EPD-660-3-0.5 Type Parameter Case 3 mm plastic lens Technology AlGaAs/GaAs water clear Optical communications, safety equipment, automation, analytics R D (typ.) [G Ω] Quantity Test сonditions t ≤ 3 s, 3 mm from case Ø2,9 Ø3,1 4,3 30,0 ±1,0 1,5 0,651,0 4,0 1,0 2,5 0,7 max 0,5 Anode Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

Preliminary 6/21/2007 rev. 03/07 EPD-660-3-0.5 Typical responsivity 500 550 600 650 700 750 800 0.0 0.2 0.4 0.6 0.8 1.0 rel. responsivitiy (arb. units) Wavelength [nm] -40 -20 0 20 40 60 80 100 120 0,80 0,85 0,90 0,95 1,00 1,05 1,10 1,15 1,20 1,25 1,30 Relative Photocurrent Temperature (° C) U R = 5V TK = 0,25%/K Relative Photocurrent vs. Temperature -40 -20 0 20 40 60 80 100 120 0,1 100 Temperature (° C) Dark Current ( pA) U R = 5V TK = 1,05 times/K Dark Current vs. Temperature Short-circuit current ( µA) Illuminance [lx] Short-circuit current vs. illuminance (typical) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2