EPD-880-1-0.9-2

EPD-880-1-0.9-2 EPIGAP | Alldatasheet

Document overview

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Technical content

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. SMD-Photodiode 28.01.2008 rev. 05 Wavelength Infrared Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.62 mm² TCI D 5 %/K Tamb -20 to +85 ° C Tstg -40 to +125 ° C Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage 1) IR = 10 µA V R 5 V Dark current VR = 1 V I D 1.0 2.5 nA Peak sensitivity wavelength VR = 0 V λp 890 nm Responsivity at λP VR = 0 V Sλ 0.3 0.55 A/W Sensitivity range at 10% 1) VR = 0 V λmin , λmax 800 960 nm Spectral bandwidth at 50% VR = 0 V Δλ 0.5 115 nm Shunt resistance VR = 10 mV R SH 205 G Ω Noise equivalent power λ = 880 nm NEP 3.2x10 -14 Specific detectivity λ = 880 nm D* 2.4x10 12 Junction capacitance VR = 0 V C J 500 pF Switching time (R L = 50 Ω) V R = 1 V t r, t f 175 ns 1) for information only Labeling Type Lot N° EPD-880-1-0.9 *Note: All measurements carried out with EPIGAP equipment Temperature coefficient of I D Typ. S λ [A/W] Quantity Parameter Test сonditions Active area Operating temperature range Storage temperature range Selective photodiode with narrow bandwidth and high spectral sensitivity in the infrared range (810…950 nm). Compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays.

Applications

Alarm systems, light barriers, special sensors EPD-880-1-0.9-2

Description

1,2 1,6 3,2 R 0,3 1,2 pad 1,15 x 1,0 0,5 all dimensions: mm all tolerances: ± 0,1 cathode 1,0 Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. SMD-Photodiode 28.01.2008 rev. 05 EPD-880-1-0.9-2 -40 -20 0 20 40 60 80 100 120 0,80 0,85 0,90 0,95 1,00 1,05 1,10 1,15 1,20 1,25 1,30 Relative Photocurrent Temperature (° C) U R = 5V TK = 0,25%/K Relative Photocurrent vs. Temperature -40 -20 0 20 40 60 80 100 120 0,1 100 Temperature (° C) Dark Current ( pA) U R = 1V TK = 1,05 times/K Dark Current vs. Temperature 700 750 800 850 900 950 1000 0,0 0,1 0,2 0,3 0,4 0,5 0,6 Wavelength [nm] Typical spectral response [A/W] Short-circuit current [µA] Irradiance [mW/cm Short-circuit current vs. irradiance (typical) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2