EPD-740-5-0.5

EPD-740-5-0.5 EPIGAP | Alldatasheet

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Technical content

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. Photodiode 19.11.2007 rev. 02 Wavelength Infrared Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Symbol Value Unit A 0.17 mm² Temperature coefficient of ID TC(ID) 5 %/K Tamb -20 to +85 °C Tstg -30 to +100 °C Tsld 260 °C ϕ 20 deg. Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage1) IR = 10 µA V R 5V Dark current VR = 5 V I D 40 200 pA Peak sensitivity wavelength VR = 0 V λp 740 nm Responsivity at λP VR = 0 V Sλ 0.5 A/W Spectral range at 10 % VR = 0 V λ0.5 680 770 nm Spectral bandwidth at 50% VR = 0 V ∆λ0.5 80 nm Shunt resistance VR = 10 mV R SH 200 GΩ Noise equivalent power λ = 740 nm NEP 7.2x10-15 Specific detectivity λ = 740 nm D* 5.7x1012 Junction capacitance VR = 0 V C J 120 pF Switching time (RL = 50 Ω)V R = 5 V t r, tf 170 ns Photo-current at λP 1,2) VR = 0 V Ee = 1mW/cm² IPh 2,5 µA 1)for information only 2) Halogen lamp source with appropriate filter Labeling Type Lot N° EPD-740-5-0.5 Note: All measurements carried out with EPIGAP equipment Optical communications, safety equipment, light barriers RD (typ.) [GΩ] Quantity Test сonditions t ≤ 3 s, 3 mm from case EPD-740-5-0.5 Type Parameter Case 5 mm plastic lens Technology AlGaAs/GaAswater clear Active area Acceptance angle at 50% Sλ Operating temperature range Storage temperature range Soldering Temperature Note: Special packages with standoff available on request

Applications

Description

Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range (740 nm peak) by means of integrated filter HzW/ 1WHzcm −⋅⋅ 9,15 36,5 ± 1,0 1,5 0,6 - 0,2 0,8 - 0,4 5,75 - 0,3 Anode 2,54 Ø 5 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. Photodiode 19.11.2007 rev. 02 EPD-740-5-0.5 600 650 700 750 800 850 0,0 0,2 0,4 0,6 0,8 1,0 rel. Responsivity (arb. units) Wavelength (nm) Typical responsivity spectrum -40 -20 0 20 40 60 0,92 0,96 1,00 1,04 Short-circuit current (arb. units) Ambient temperature [°C] Short-circuit current vs. ambient temperature - 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 0 0,1 100 Temperature (°C) Dark Current (pA) UR = 5V TK = 1,05 times/K Dark Current vs. Temperature - 2 0 - 1 00 1 02 03 04 05 06 07 0 100 Response bandwith (nm) Ambient temperature [°C] Spectral bandwith (∆λ0.5) vs. ambient temperature Typical receiving pattern rel. Responsivity (a.u.) Short-circuit current (µA) Irradiance [mW/cm Short-circuit current vs. irradiance (typical) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2