EPD-525-0-1.4

EPD-525-0-1.4 EPIGAP | Alldatasheet

Document overview

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Technical content

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. Photodiode 22.04.2008 rev. 01 Wavelength Green, selective Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 1.79 mm² TC ID 4.7 %/K Tamb -40 to +125 ° C Tstg -40 to +125 ° C Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Dark current VR = 5 V I D 5 30 pA Peak sensitivity wavelength VR = 0 V λp 525 nm Responsivity at λP VR = 0 V Sλ 0.08 A/W Sensitivity range at 1% 1) VR = 0 V λmin , λmax 410 580 nm Spectral bandwidth at 50% VR = 0 V Δλ 0.5 75 nm Shunt resistance VR = 10 mV R SH 200 G Ω Noise equivalent power λ = 525 nm NEP 10.6x10 -14 Specific detectivity λ = 525 nm D* 1.26x10 13 Junction capacitance VR = 0 V C J 180 pF Switching time (R L = 50 Ω) V R = 1 V t r, t f 35 ns 1) for information only 2) Standard light source with a color temperature of 2856 K Labeling Type Lot N° EPD-525-0-1.4 *Note: All measurements carried out with EPIGAP equipment EPD-525-0-1.4 Integrated filter GaP TO-18 Type Technology Case Narrow bandwidth and high spectral sensitivity in the green visible range (500…600 nm), mounted in hermetically sealed T0-18 package.

Applications

Alarm systems, light barriers, special sensors for automotive industry, for nearly V λ matched detectors

Description

Parameter Test сonditions Active area Operating temperature range Storage temperature range Temperature coefficient of I D T = -40…120° C Typ. S λ [A/W] Quantity Hz W/ 1WHz cm −⋅⋅ Ø 4,65-0,1 Ø 5,4 +0,1 -0,1 0,2 +0,025 -0,025 Ø 0,44 +0,03 -0,03 13,4 +1,6 -1,6 0,23 +0,075 2,54 Ø 4,22 Ø 5,33 Cathode Anode TO-18 3,5 +0,1 -0,1 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. Photodiode 22.04.2008 rev. 01 EPD-525-0-1.4 Optical Responsivity (typically) Allowable Soldering Profile 400 450 500 550 600 0,0 0,2 0,4 0,6 0,8 1,0 Sensitivity (arb. units) Wavelength [nm] -40 -20 0 20 40 60 80 100 120 0,80 0,85 0,90 0,95 1,00 1,05 1,10 1,15 1,20 1,25 1,30 Relative Photocurrent Temperature (° C) U R = 5V TK = 0,25%/K Relative Photocurrent vs. Temperature -40 -20 0 20 40 60 80 100 120 0,1 100 Temperature (° C) D ark Current ( pA) UR = 5V TK = 1,05 times/K Dark Current vs. Temperature EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2