EPD-880-0-1.4 EPIGAP | Alldatasheet
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Technical content
Preliminary 6/28/2007 rev. 01/07 Wavelength Infrared Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 1.2 mm² Temperature coefficient of I D TC (I D ) 5 %/K Tamb -30 to +100 ° C Tstg -40 to +125 ° C Tsld 260 ° C ϕ 45 deg. Optical and Electrical Characteristics T amb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage 1) IR = 10 µA V R 5 V Dark current VR = 1 V I D 1.0 2.5 nA Peak sensitivity wavelength VR = 0 V λp 890 nm Responsivity at λP VR = 0 V Sλ 0.3 0.55 A/W Sensitivity range at 10% 1) VR = 0 V λmin , λmax 800 960 nm Spectral bandwidth at 50% VR = 0 V Δλ 0.5 115 nm Shunt resistance VR = 10 mV R SH 205 G Ω Noise equivalent power λ = 880 nm NEP 3.3x10 -14 Specific detectivity λ = 880 nm D* 2.4x10 12 Junction capacitance VR = 0 V C J 590 pF Switching time (R L = 50 Ω) V R = 1 V t r, t f 200 ns Photo-current at λP = 875 nm VR = 0 V Ee = 1mW/cm² IPh 4.8 µA 1) for information only 2) Halogen lamp source with appropriate filter Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° EPD-880-0-1.4 Alarm systems, light barriers, special sensors, analytics, optical communication R D (typ.) [G Ω] Quantity Test сonditions t ≤ 3 s, 3 mm from case EPD-880-0-1.4 Type Parameter Case TO-46 Technology AlGaAs/GaAs Integrated filter Active area Acceptance angle at 50% S λ Operating temperature range Storage temperature range Soldering Temperature Note: Special packages with standoff available on request
Applications
Description
Selective photodiode mounted in hermetically sealed TO-46 package. Narrow bandwidth and high spectral sensitivity in the infrared range (810…950 nm). Ø 4,75-0,1 Ø 5,33 +0,05 -0,05 0,2 +0,025 -0,025 Ø 0,44 +0,03 -0,03 13,4 +1,6 -1,6 0,23 +0,075 2,54 Ø 4,22 Ø 5,31 Chip Location Cathode Anode TO-46 5,1 +0,1 -0,1 Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2
Preliminary 6/28/2007 rev. 01/07 EPD-880-0-1.4 -40 -20 0 20 40 60 80 100 120 0,80 0,85 0,90 0,95 1,00 1,05 1,10 1,15 1,20 1,25 1,30 Relative Photocurrent Temperature (° C) U R = 5V TK = 0,25%/K Relative Photocurrent vs. Temperature -40 -20 0 20 40 60 80 100 120 0,1 100 Temperature (° C) Dark Current ( pA) UR = 1V TK = 1,05 times/K Dark Current vs. Temperature 700 750 800 850 900 950 1000 0,0 0,1 0,2 0,3 0,4 0,5 0,6 Wavelength [nm] Typical spectral response [A/W] Short-circuit current [µA] Irradiance [mW/cm Short-circuit current vs. irradiance (typical) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2