EPC-1300-3.0-4

EPC-1300-3.0-4 EPIGAP | Alldatasheet

Document overview

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Technical content

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. Photodiode-Chip 16.05.2008 rev. 03 Wavelength range Infrared typ. dimensions in µm

Description

330 ( ±20) µm bond gold 1.0 µm

Applications

Tamb = 25° C, unless otherwise specified Symbol Value Unit A 7.0 mm² Tamb -40 to +125 ° C Tstg -40 to +125 ° C TC (I D ) 7.4 %/K Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Forward voltage IF = 10 mA V F 0.6 V Breakdown voltage 2) IR = 10 µA V R 5 V Sensitivity range at 10 % VR = 0 V λ 440 1710 nm Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm 1) VR = 0 V S λ 0.9 A/W Dark current VR = 5 V I D 5 30 nA Shunt resistance VR = 10 mV R SH 15 30 M Ω Noise equivalent power λ = 1300 nm NEP 5.2x10 -14 Specific detectivity λ = 1300 nm D* 5.1x10 12 Junction capacitance VR = 0 V C J 1000 1300 pF 1) measured on bare chip on TO-18 header 2) for information only Labeling Type Typ. I D [nA] Typ. S λ[A/W] EP С-1300-3.0-4 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment Temperature coefficient of I D T = -40…120° C Storage temperature range Active area Operating temperature range Broadband photodiode with maximum response in the NIR-region and enhanced responsivity in the visible range, no rear side metalization typ. thickness Optical communications, safety equipment, light barriers Parameter Test сonditions top side* rear side * Bond pad assigment: Pos. 1 - Anode Pos. 2 - Cathode Type Planar EPC-1300-3.0-4 Electrodes Both on top side Technology InGaAs/InP Lot N° Quantity Hz W/ 1WHz cm −⋅⋅ Ø3000 Ø200 Ø150 3350 ±20 3350 ±20 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. Photodiode-Chip 16.05.2008 rev. 03 EPC-1300-3.0-4 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 1 6 0 0 1 8 0 0 0 ,0 0 ,2 0 ,4 0 ,6 0 ,8 1 ,0 1 ,2 T yp ic a l O p tic a l R e s p o n s ivity Responsivity (A/W) W a v e le n g th [n m ] 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 0 1 0 0 D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re Dark Current [nA] A m b ie n t T e m p e ra tu re [°C ] T K = 0 .7 4 % /K 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 0 ,9 0 0 ,9 2 0 ,9 4 0 ,9 6 0 ,9 8 1 ,0 0 1 ,0 2 1 ,0 4 S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ] Short-Circuit Current [arb. units ] A m b ie n t T e m p e ra tu re [°C ] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2