EPD-660-1-0.9 EPIGAP | Alldatasheet

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Technical content

Preliminary 6/21/2007 rev. 03/07 Wavelength Red Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.62 mm² Tamb -20 to +85 ° C Tstg -40 to +125 ° C Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage 1) IR = 10 µA V R 10 V Dark current (E e = 0 W/m²) V R = 1 V I D 40 300 pA Responsivity at λP VR = 0 V Sλ 0.42 A/W Peak sensitivity VR = 0 V λP 660 nm Sensitivity range at 50% VR = 0 V λmin , λmax 620 700 nm Spectral bandwidth at 50% VR = 0 V Δλ 0.5 80 nm Shunt resistance VR = 10 mV R SH 200 400 G Ω Noise equivalent power λ = 660 nm NEP 8.5x10 -15 Specific detectivity λ = 660 nm D* 9.2x10 12 Junction capacitance VR = 0 V C J 40 pF Switching time (R L = 50 Ω) V R = 1 V t r, t f 40 ns 1) for information only Labeling Type Lot N° EPD-660-1-0.9 *Note: All measurements carried out with EPIGAP equipment SMD AlGaAs/GaAs SMD 1206 Type Technology Case Operating temperature range Storage temperature range Narrow bandwidth and high spectral sensitivity in the red visible range (610…700 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays

Applications

Light barriers, optical communications, safety equipment, alarm systems EPD-660-1-0.9

Description

Parameter Test сonditions Active area Typ. S λ [A/W] Quantity 1,2 1,6 3,2 R 0,3 1,2 pad 1,15 x 1,0 0,5 all dimensions: mm all tolerances: ± 0,1 cathode 1,0 Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

Preliminary 6/21/2007 rev. 03/07 EPD-660-1-0.9 Optical sensitivity (typically) 500 550 600 650 700 750 800 0,0 0,2 0,4 0,6 0,8 1,0 Sensitivity (arb. units) Wavelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2