EPD-525-1-0.9

EPD-525-1-0.9 EPIGAP | Alldatasheet

Document overview

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Technical content

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. SMD-Photodiode 20.11.2007 rev. 06 Wavelength Green Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Symbol Value Unit A 0.62 mm² TCID 5 %/K Tamb -20 to +85 °C Tstg -40 to +125 °C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage1) IR = 10 µA V R 5V Dark current VR = 5 V I D 53 0 p A Peak sensitivity wavelength VR = 0 V λp 525 nm Responsivity at λP VR = 0 V Sλ 0.3 A/W Sensitivity range at 1% 1) VR = 0 V λmin, λmax 410 580 nm Spectral bandwidth at 50% VR = 0 V ∆λ0.5 70 nm Shunt resistance VR = 10 mV R SH 300 GΩ Noise equivalent power λ = 525 nm NEP 4.4x10-15 Specific detectivity λ = 525 nm D* 1.8x1013 Junction capacitance VR = 0 V C J 100 pF Switching time (RL = 50 Ω)V R = 1 V t r, tf 35 ns VR = 0 V Ev = 1000 lx 1)for information only 2) Standard light source with a color temperature of 2856 K Labeling Type Lot N° EPD-525-1-0.9 *Note: All measurements carried out with EPIGAP equipment SMD GaP SMD 1206 Type Technology Case Narrow bandwidth and high spectral sensitivity in the green visible range (500…600 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling o arrays

Applications

Alarm systems, light barriers, special sensors for automotive industry, for nearly V λ matched detectors EPD-525-1-0.9

Description

Parameter Test сonditions Active area Operating temperature range Storage temperature range Temperature coefficient of ID Typ. Sλ [A/W] Quantity Photocurrent at illuminant A1,2) IPh 70 nA 1,2 1,6 3,2 R 0,3 1,2 pad 1,15 x 1,0 0,5 all dimensions: mm all tolerances: ± 0,1 cathode 1,0 HzW/ 1WHzcm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. SMD-Photodiode 20.11.2007 rev. 06 EPD-525-1-0.9 Optical responsivity (typically) Allowable soldering profile 400 450 500 550 600 0,0 0,2 0,4 0,6 0,8 1,0 Sensitivity (arb. units) Wavelength [nm] - 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 0 0,80 0,85 0,90 0,95 1,00 1,05 1,10 1,15 1,20 1,25 1,30Relative Photocurrent Temperature (°C) UR = 5V TK = 0,25%/K Relative Photocurrent vs. Temperature - 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 0 0,1 100 Temperature (°C) Dark Current (pA) UR = 5V TK = 1,05 times/K Dark Current vs. Temperature EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2