EPD-470-5-0.5 EPIGAP | Alldatasheet

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Preliminary 11.04.2007 rev. 04/07 Wavelength Blue - Green Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.17 mm² Temperature coefficient of I D TC (I D ) 5 %/K Tamb -40 to +85 ° C Tstg -40 to +100 ° C ϕ 20 deg. Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Breakdown voltage 1) IR = 10 µA V R 10 V Dark current VR = 5 V I D 5 30 pA Peak sensitivity wavelength VR = 0 V λp 460 470 480 nm Responsivity at 470 nm VR = 0 V Sλ 0.3 A/W Sensitivity range at 1% 1) VR = 0 V λmin , λmax 385 565 nm Spectral bandwidth at 50% VR = 0 V Δλ 0.5 100 nm Shunt resistance VR = 10 mV R SH 70 100 G Ω Noise equivalent power λ = 470 nm NEP 4.4x10 -15 Specific detectivity λ = 470 nm D* 9.3x10 12 Junction capacitance VR = 0 V C J 120 pF Switching time (R L = 50 Ω) V R = 5 V t r, t f 200 ns Photo current at Illuminant A VR = 0 V Ev = 1000 lx IPh 0.2 µA 1) for information only Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° EPD-470-5-0.5 Optical communications, safety equipment, automation, analytics, fluorescence detection R D (typ.) [G Ω] Quantity Test сonditions EPD-470-5-0.5 Type Parameter Case 5 mm plastic lens Technology GaP Integrated filter Active area Acceptance angle at 50% S λ Operating temperature range Storage temperature range Note: Special packages with standoff available on request

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Selective photodiode chip in standard 5 mm package. Narrow bandwidth and high spectral sensitivity in the range of 400 - 560 nm. Housing without standoff leads. 9,15 36,5 ± 1,0 1,5 0,6- 0,2 0,8- 0,4 5,75- 0,3 Anode 2,54 Ø 5 Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

Preliminary 11.04.2007 rev. 04/07 EPD-470-5-0.5 350 400 450 500 550 600 1E-4 1E-3 0,01 0,1 Wavelength [nm] Typical Optical Responsivity (A/W) 20 40 60 80 100 120 100 200 300 400 V R = 5V V R = 1V Dark current vs. ambient temperature ID (pA) Temperature T amb (° C) 0 1 2 3 4 5 100 120 140 Junction capacitance vs. reverse voltage Junction capacitance C J (pF) Reverse Voltage V R (V) Short circuit current vs. illuminance* Short circuit current I Ph (nA) Illuminance E v (lx) 20 30 40 50 60 70 80 90 100 0,85 0,90 0,95 1,00 1,05 1,10 1,15 1,20 Relative Photo-current vs. ambient temperature rel. photo-current (arb. units) Ambient temperature T amb (° C) 20 40 60 80 100 120 rel. sensitivity wavelength vs. ambient temperature rel. to λP at T amb = 25° C Wavelength shift in nm Ambient temperature (° C) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2