EPD-1300-5-0.2 EPIGAP | Alldatasheet

Document overview

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Technical content

Preliminary 6/21/2007 rev. 06/07 Wavelength Infrared Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.032 mm² Temperature coefficient TC (I D ) 7.4 %/K Tamb -40 to +85 ° C Tstg -40 to +100 ° C Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Forward voltage IF = 10 mA V F 1.7 V Breakdown voltage 2) IR = 10 µA V R 5 V Sensitivity range at 10 % VR = 0 V λ 800 1750 nm Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm 1) VR = 0 V S λ 0.9 A/W Dark current VR = 5 V I D 30 200 pA Shunt resistance VR = 10 mV R SH 3 5 G Ω Noise equivalent power λ =1300 nm NEP 4.0x10 -15 Specific detectivity λ = 1300 nm D* 4.5x10 12 Junction capacitance VR = 0 V C J 11 pF Photo current at 1300 nm* VR = 0 V Ee = 1mW/cm² IPh 0.95 µA 1) measured on bare chip 2) for information only Note: All measurements carried out with EPIGAP equipment Labeling Type Lot N° EPD-1300-5-0.2 Note: Special packages with standoff available on request

Applications

Optical communications, safety equipment, light barriers

Description

InGaAs-Photodiode mounted in standard 5 mm package without standoff . High spectral sensitivity in the infrared range (NIR, SWIR). Test сonditions Active area Storage temperature range Operating temperature range EPD-1300-5-0.2 Type Parameter Case 5 mm plastic lens Technology InGaAs/InP Planar RD (typ.) [G Ω] Quantity 9,15 36,5 ± 1,0 1,5 0,6- 0,2 0,8- 0,4 5,75- 0,3 Anode 2,54 Ø 5 Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

Preliminary 6/21/2007 rev. 06/07 EPD-1300-5-0.2 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 Typical Optical Responsivity (A/W) Wavelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2