EPD-1300-0-3.0 EPIGAP | Alldatasheet

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Technical content

Preliminary 6/21/2007 rev. 04/07 Wavelength Infrared Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 7.0 mm² Temperature coefficient TC (I D ) 7.4 %/K Tamb -40 to +85 ° C Tstg -40 to +100 ° C Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Forward voltage IF = 10 mA V F 0.6 V Breakdown voltage 2) IR = 10 µA V R 5 V Sensitivity range at 10 % VR = 0 V λ 800 1750 nm Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm 1) VR = 0 V S λ 0.9 A/W Dark current VR = 5 V I D 5 30 nA Shunt resistance VR = 10 mV R SH 15 30 M Ω Noise equivalent power λ = 1300 nm NEP 5.2x10 -14 Specific detectivity λ = 1300 nm D* 5.1x10 12 Junction capacitance VR = 0 V C J 1000 1300 pF Photo current at 1300 nm 2) VR = 0 V Ee = 1mW/cm² IPh 15 µA 1) measured on bare chip 2) for information only Note: All measurements carried out with EPIGAP equipment Test сonditions InGaAs-Photodiode mounted in TO-39 standard package . High spectral sensitivity in the infrared range (NIR , SWIR) due to large active area.

Description

Applications

Optical communications, safety equipment, light barriers Active area Storage temperature range Operating temperature range EPD-1300-0-3.0 Type Parameter Case TO-39 Technology InGaAs/InP Planar 5,90 ± 0,1 8,13 ± 0,1 13,5 ± 1,0 0,45 2,00 ± 0,05 Ø9,14 Ø7,62 9,90 ± 0,1 45,00° 0,80 ± 0,05 3,25 ± 0,1 Chip Location Chip Location Anode ELC-70 Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

Preliminary 6/21/2007 rev. 04/07 EPD-1300-0-3.0 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 Typical Optical Responsivity (A/W) W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2