EPD-1300-0-0.5 EPIGAP | Alldatasheet
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Technical content
Preliminary 6/21/2007 rev. 03/07 Wavelength Infrared Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.196 mm² Temperature coefficient TC (I D ) 0.074 1/K Tamb -40 to +85 ° C Tstg -40 to +100 ° C Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Forward voltage IF = 10 mA V F 0.8 V Breakdown voltage 2) IR = 10 µA V R 5 V Sensitivity range at 10 % VR = 0 V λ 800 1750 nm Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm 1) VR = 0 V S λ 0.9 A/W Dark current VR = 5 V I D 250 1000 pA Shunt resistance VR = 10 mV R SH 0.5 1.0 G Ω Noise equivalent power λ = 1300 nm NEP 1.1x10 -14 Specific detectivity λ = 1300 nm D* 4.0x10 12 Junction capacitance VR = 0 V C J 45 pF 1) measured on bare chip on TO-18 header 2) for information only EPD-1300-0-0.5 Type Parameter Case TO-18 Technology InGaAs/InP Planar Active area Storage temperature range Operating temperature range Test сonditions InGaAs-Photodiode mounted in TO-18 standard package covered with epoxy. High spectral sensitivity in the infrared range (NIR, SWIR).
Description
Applications
Optical communications, safety equipment, light barriers Ø 0,45 13,5 ± 1,0 0,2 2,54 ± 0,2 Cathode Anode TO-18+epoxy Ø 5,40 ± 0,1 1,0 45° 2,0 ± 0,2 2,8 ± 0,4 Ø 4,2 ± 0,2 epoxy-lensAu-plating Hz W/ 1WHz cm −⋅⋅ EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2
Preliminary 6/21/2007 rev. 03/07 EPD-1300-0-0.5 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 Typical Optical Responsivity (A/W) W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2