EPC-880-0.5 EPIGAP | Alldatasheet
Document overview
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Technical content
Preliminary 11.04.2007 rev. 04/07 Wavelength range Infrared, selective typ. dimensions (µm)
Description
300 (±20) µm anode gold alloy, 1.5 µm cathode Applications gold alloy, 0.5 µm Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Symbol Value Unit A 0.17 mm² Tamb -40 to +125 °C Tstg -40 to +125 °C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Dark current VR = 1 V I D 1.0 2.5 nA Peak sensitivity VR = 0 V λP 890 nm Spectral range at 50 % VR = 0 V λ0.5 820 935 nm Spectral bandwidth at 50% VR = 0 V ∆λ0.5 115 nm Responsivity at λP 1 VR = 0 V S λ 0.15 0.25 A/W Switching time VR = 1 V t r, tf 15/30 ns 1Measured on bare chip on TO-18 header Labeling Type Typ. ID [pA] Typ. S λ[A/W] EPС-880-0.5 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment Lot N° Quantity Type Integrated filter EPC-880-0.5 Electrodes P (anode) up Technology AlGaAs/GaAs Infrared-selective photo- diode with narrow response range (810 - 950 nm) typ. thickness Optical communications, safety equipment, light barriers Parameter Test сonditions Storage temperature range Active area Operating temperature range PD-02 300 360 460 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2
Preliminary 11.04.2007 rev. 04/07 EPC-880-0.5 700 750 800 850 900 950 1000 0,0 0,1 0,2 0,3 0,4 0,5 0,6 Wavelength [nm] Typical spectral response [A/W] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2