EPC-1300-0.22-1

EPC-1300-0.22-1 EPIGAP | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. Photodiode-Chip 16.05.2008 rev. 08 Wavelength range Infrared typ. dimensions in µm

Description

330 ( ±20) µm bond gold 1.0 µm

Applications

gold alloy, 0.5 µm Miscellaneous Parameters Tamb = 25° C, unless otherwise specified Symbol Value Unit A 0.032 mm² Tamb -40 to +125 ° C Tstg -40 to +125 ° C TC (I D ) 7.4 %/K Optical and Electrical Characteristics Tamb = 25° C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Forward voltage IF = 10 mA V F 1.7 V Breakdown voltage 2) IR = 10 µA V R 5 V Sensitivity range at 10 % VR = 0 V λ 800 1750 nm Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm 1) VR = 0 V S λ 0.9 A/W Dark current VR = 5 V I D 30 200 pA Shunt resistance VR = 10 mV R SH 3 5 G Ω Noise equivalent power λ =1300 nm NEP 4.0x10 -15 Specific detectivity λ = 1300 nm D* 4.5x10 12 Junction capacitance VR = 0 V C J 11 pF 1) measured on bare chip on TO-18 header 2) for information only Labeling Type Typ. I D [pA] Typ. S λ[A/W] EP С-1300-0.22-1 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment Lot N° Quantity Type Planar EPC-1300-0.22-1 Electrodes P (anode) up Technology InGaAs/InP Infrared-selective photodiode with response range in the NIR-region (800 - 1750 nm) typ. thickness Optical communications, safety equipment, light barriers Parameter Test сonditions anode (pin 1) cathode (rear*) *also pin 2, for measuring purposes Active area Operating temperature range Temperature coefficient of I D T = -40…120° C Storage temperature range Hz W/ 1WHz cm −⋅⋅ 460 ±20 460 ±20 110 100 220 150 110 100 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. Photodiode-Chip 16.05.2008 rev. 08 EPC-1300-0.22-1 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 1 6 0 0 1 8 0 0 0 ,0 0 ,2 0 ,4 0 ,6 0 ,8 1 ,0 Responsivity (A/W) T yp ic a l O p tic a l R e s p o n s ivity W a v e le n g th [n m ] 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 0 1 0 0 D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re Dark Current [nA] A m b ie n t T e m p e ra tu re [°C ] T K = 0 .7 4 % /K 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 0 ,9 0 0 ,9 2 0 ,9 4 0 ,9 6 0 ,9 8 1 ,0 0 1 ,0 2 1 ,0 4 S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ] Short-Circuit Current [arb. units ] A m b ie n t T e m p e ra tu re [°C ] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2