EPB025A-70 EXCELICS | Alldatasheet
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D G (All Leads)40 180 Min. Excelics EPB025A-70 DATA SHEET Low Noise High Gain Heterojunction FET
- NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE
- TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz
- 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
- Si3N 4 PASSIVATION
- ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT NF Noise Figure f = 12GHz Vds=2V, Ids=15mA 0.85 1.0 dB Ga Associated Gain f = 12GHz Vds=2V, Ids=15mA 9.5 10.5 dB P1dB Output Power at 1dB Compression f=12GHz Vds=3V, Ids=25mA f=18GHz 15.0 15.0 dBm G 1dB Gain at 1dB Compression f=12GHz Vds=3V, Ids=25mA f=18GHz 12.0 9.5 dB Idss Saturated Drain Current Vds=2V, Vgs=0V 20 50 80 mA Gm Transconductance Vds=2V, Vgs=0V 50 80 mS Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3 -5 V BVgs Source Breakdown Voltage Igs=10uA -3 -5 V Rth Thermal Resistance 370 * oC/W *Overall Rth depends on case mounting MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 3V Vgs Gate-Source Voltage -3V -3V Ids Drain Current Idss 50mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12dBm @ 1dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 370mW 310mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com All Dimensions In mils
Low Noise High Gain Heterojunction FET S-PARAMETERS 2V, 15m A (GHz ) M A G A N G M A G A N G M A G A N G M A G A NG