EPA025A-70 EXCELICS | Alldatasheet

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Technical content

/G36 /G36 /G27 /G2A /G0B/G24/G4F/G4F /G2F/G48/G44/G47/G56/G0C /G17/G13 /G15/G13 /G17/G17 /G14/G1C /G17 /G1A/G13 /G14/G1B/G13 /G30/G4C/G51/G11 Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET

  • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
  • +21.5dBm TYPICAL OUTPUT POWER
  • 8.0dB TYPICAL POWER GAIN AT 18 GHz
  • TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12 GHz
  • 0.3 X 250 MICRON RECESSED “MUSHR OOM” GATE
  • Si3N 4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1dB Output Power at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz 19.5 21.5 21.5 dBm G 1dB Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz 9.5 11.0 8.0 dB PAE Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12GHz 47 % NF Noise Figure f=12GHz Vds=2V, Ids=15mA 0.85 dB Ga Associated Gain f=12GHz Vds=2V, Ids=15mA 11.0 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 40 75 105 mA Gm Transconductance Vds=3V, Vgs=0V 50 80 mS Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -9 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -6 -14 V Rth Thermal Resistance 370 * oC/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 10V 6V Vgs Gate-Source Voltage -6V -3V Ids Drain Current Idss 50mA Igsf Forward Gate Current 12mA 2mA Pin Input Power 18dBm @ 3dB Compression Tch Channel Temperature 175 oC 150 oC Tstg Storage Temperature -65/175 oC -65/150 oC Pt Total Power Dissipation 370mW 310mW Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com All Dimensions In mils.

High Efficiency Heterojunction Pow er FET S-PARA M ETERS S-PARA M ETERS 6V, 1/2 Idss 2V, 15m A (GH z) M A G A N G M A G A N G M A G A N G M A G A N G (GH z) M A G A N G M A G A N G M A G A N G M A G A NG EPA025A-70 Noise Parameters Vds=2V, Ids=15m A Freq. Pop t N fm in (G Hz) ( M AG ) (AN G ) (dB) R n/50 2 0.7 3 25 0.37 0.22 4 0.6 4 55 0.46 0.18 6 0.4 9 81 0.56 0.14 8 0.4 2 107 0.64 0.11 10 0.3 2 135 0.76 0.08 12 0.2 6 173 0.88 0.08 14 0.2 8 -156 1.08 0.12 16 0.3 2 -103 1.31 0.24 18 0.3 7 -55 1.51 0.37 20 0.4 4 -25 1.65 0.51 22 0.4 4 -15 1.88 0.59 24 0.4 6 25 2.05 0.69 26 0.4 4 39 2.29 0.49