EPA960B EXCELICS | Alldatasheet

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Technical content

High Efficiency Heterojunction Power FET

  • +38.5dBm TYPICAL OUTPUT POWER
  • 18.5dB TYPICAL POWER GAIN AT 2 GHz
  • 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE
  • Si3N 4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
  • Idss SORTED IN 240mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz 37.0 38.5 38.5 dBm G 1dB Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz 17.0 18.5 13.5 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 1760 2880 3760 mA Gm Transconductance Vds=3V, Vgs=0V 1920 3120 mS Vp Pinch-off Voltage Vds=3V, Ids=28mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=9.6mA -11 -15 V BVgs Source Breakdown Voltage Igs=9.6mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 5 oC/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 2.8A Igsf Forward Gate Current 480mA 80mA Pin Input Power 36dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 27 W 23 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns /G1A/G18 /G14/G13/G13 /G1C/G17 /G14/G15/G13 /G14/G13/G17 /G14/G19/G13 /G14/G18/G18 /G19/G15/G13 /G1A/G15 /G14/G15/G14/G13 /G27 /G27/G27/G27 /G2A /G2A/G2A/G2A/G36/G36 /G36 /G36 /G36

High Efficiency Heterojunction Pow er FET S-PARA M ETERS 8V, 1/2 Idss (GH z) MAG AN G MAG AN G MAG AN G MA G ANG N ote: T he data included 0.7 mils diame ter Au bonding wires: 4 gate w ires, 20 m ils each; 4 drain w ires, 12 m ils each; 10 source w ires, 7 m ils each.