EPA720A EXCELICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

High Efficiency Heterojunction Power FET

  • +37.5dBm TYPICAL OUTPUT POWER
  • 19.0dB TYPICAL POWER GAIN AT 2 GHz
  • 0.4 X 7200 MICRON RECESSED “MUSHROOM” GATE
  • Si3N 4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
  • Idss SORTED IN 180mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz 36.0 37.5 37.5 dBm G 1dB Gain at 1dB Compression f= 2GHz Vds=8V, Ids=50% Idss f= 4GHz 17.5 19.0 14.0 dB PAE Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=2GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 1320 2160 2820 mA Gm Transconductance Vds=3V, Vgs=0V 1440 2280 mS Vp Pinch-off Voltage Vds=3V, Ids=22mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=7.2mA -11 -15 V BVgs Source Breakdown Voltage Igs=7.2mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 6 oC/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 1.6A Igsf Forward Gate Current 360mA 60mA Pin Input Power 35dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 23 W 19 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com Chip Thickness: 50 ± 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns /G1A/G18 /G14/G13/G13 /G1C/G17 /G14/G15/G13 /G14/G13/G17 /G14/G19/G13 /G14/G18/G18 /G19/G15/G13 /G1A/G15 /G1C/G17/G13 /G27/G27/G27 /G2A /G2A /G2A/G36/G36/G36 /G36

High Efficiency Heterojunction Pow er FET S-PARA M ETERS 8V, 1/2 Idss (GH z) MA G ANG MA G ANG MA G ANG MA G ANG N ote: T he data included 0.7 mils diame ter Au bonding wires: 3 gate wires, 20 m ils each; 3 drain wires, 12 m ils each; 8 source wires, 7 m ils each.