EPA060B EXCELICS | Alldatasheet

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Technical content

/G18/G13 /G17/G1B /G14/G13/G13 /G16/G18 /G13 /G18/G13/G1C/G18 /G17/G13 /G16/G18/G13 /G27 /G2A Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET

  • +26.5dBm TYPICAL OUTPUT POWER
  • 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz
  • 0.4dB TYPICAL NOISE FIGURE AT 2GHz
  • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
  • Si3N 4 PASSIVATION
  • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
  • EPA060BV WITH VIA HOLE SO URCE GROUNDING
  • Idss SORTED IN 15mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS EPA060B EPA060BV UNIT MIN TYP MAX MIN TYP MAX Output Power at 1dB Compression f=12GHz 26.5 26.5 P1dB Vds=8V, Ids=50% Idss f=18GHz 26.5 26.5 dBm Gain at 1dB Compression f=12GHz 11 13 13 14.5 G 1dB Vds=8V, Ids=50% Idss f=18GHz 10 11.5 dB Gain at 1dB Compression PAE Vds=8V, Ids=50% Idss f=12GHz NF Noise Figure Vds=5V,Ids=50mA f=2GHz 0.4 0.4 dB G A Associated Gain Vds=5V,Ids=50mA f=2GHz 20 20 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 110 180 250 110 180 250 mA Gm Transconductance Vds=3V, Vgs=0V 120 190 120 190 mS Vp Pinch-off Voltage Vds=3V, Ids=2.0mA -1 -2.5 -1 -2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -11 -15 -11 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -7 -14 -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 75 55 oC/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS EPA060B EPA060BV ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V Ids Drain Current Idss 190mA Idss Idss Igsf Forward Gate Current 30mA 5mA 30mA 5mA Pin Input Power 24dBm @ 3dB Compression 24dBm @ 3dB Compression Tch Channel Temperature 175 oC 150 oC 175 oC 150 oC Tstg Storage Temperature -65/175 oC -65/150 oC -65/175 oC -65/150 oC Pt Total Power Dissipation 1.8W 1.5W 2.5W 2.1W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com Chip Thickness: 75 ± 20 microns All Dimensions In Microns : Via Hole No Via Hole For EPA060B

High Efficiency Heterojunction Pow er FET E PA060B S-PARA M ETERS E PA060B 8V, 1/2 Idss (GH z) M A G A N G M A G A NG M A G A NG M A G A N G (GH z) M A G A NG M A G A NG M A G A NG M A G A NG S-PARAMETERS EPA060 B V 8V, 1/2 Idss N ote: T he data included 0.7 mils diame ter Au bonding wires; 1gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source w ires, 7 m ils each; no source w ires for EPA 060B V . (GH z) M A G A N G M A G A N G M A G A N G M A G A NG (GH z) M A G A N G M A G A N G M A G A N G M A G A NG

High Efficiency Heterojunction Pow er FET S-Param eters E PA060 B , 5V,50m A (GH z) M A G A N G M A G A N G M A G A N G M A G A N G (GH z) M A G A N G M A G A N G M A G A N G M A G A NG EPA060B N oise Param eters Vds=5V, Ids=50m A Freq G am m a Opt N fm in (GHz) (MAG ) (ANG) (dB) Rn/50 2 0 .4 44 0.45 0.09 4 0 .46 89 0.55 0.07 6 0 .52 108 0.75 0.06 8 0 .52 137 0.92 0.05 10 0 .53 162 1.37 0.04 12 0 .54 174 1.47 0.04 14 0 .58 -176 1.92 0.05 16 0 .62 -162 2.47 0.06 18 0 .68 -153 3.03 0.09 20 0 .69 -147 3.24 0.14 22 0 .7 -141 3.43 0.24 24 0 .72 -132 3.65 0.38 26 0 .74 -128 3.86 0.6