EPB018B5 EXCELICS | Alldatasheet

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ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007

FEATURES

  • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE
  • TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz
  • 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE
  • Si 3N4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS MIN TYP MAX UNITS NF Noise Figure, f = 12GHz VDS = 2 V, IDS ≈ 15 mA EPB018B5-70 EPB018B7-70 EPB018B9-70 0.50 0.65 0.95 0.60 0.80 1.20 dB Ga Associated Gain, f = 12GHz VDS = 2 V, IDS ≈ 15 mA EPB018B5-70 EPB018B7-70 EPB018B9-70 11.5 11.0 10.5 13.0 12.5 11.5 dB

15.0 P1dB Output Power at 1dB Compression f = 12GHz

VDS = 3 V, IDS = 25 mA f = 18GHz 15.0 dBm G1dB Gain at 1dB Compression f = 12GHz VDS = 3 V, IDS = 25 mA f = 18GHz 14.0 11.5 dB IDSS Saturated Drain Current V DS = 2 V, VGS = 0 V 15 45 80 mA GM Transconductance V DS = 2 V, VGS = 0 V 50 90 mS VP Pinch-off Voltage V DS = 2 V, IDS = 1.0 mA -0.8 -2.5 V BVGD Drain Breakdown Voltage I GD = 10 uA -3 -6 V BVGS Source Breakdown Voltage I GS = 10 uA -3 -6 V RTH Thermal Resistance 480* oC/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25°C SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss 60mA Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12dBm @1dB Compression Tch Channel Temperature 175oC 150 oC Tstg Storage Temperature -65/175oC -65/150 oC Pt Total Power Dissipation 285mW 240mW Notes: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.

ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 S-PARAMETERS VDS = 2 V, IDS = 15 mA EPB018B5-70 EPB018B7-70 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQ (GHz) MAG ANG MAG ANG MAG ANG MAG ANG NOISE-PARAMETERS EPB018B7-70 VDS = 2 V, IDS = 15 mA FREQ Gamma Opt Nfmin (GHz) MAG ANG (dB) Rn/50 2 0.76 25 0.37 0.26 4 0.65 56 0.43 0.22 6 0.51 84 0.48 0.16 8 0.41 118 0.55 0.11 10 0.26 159 0.61 0.08 12 0.26 -144 0.68 0.08 14 0.32 -82 0.89 0.18 16 0.40 -46 1.10 0.29 18 0.40 -26 1.30 0.45 20 0.51 8 1.45 0.55 22 0.41 27 1.69 0.61 24 0.48 75 1.83 0.59 26 0.52 108 2.05 0.40

ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.