EPB018A5 EXCELICS | Alldatasheet

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Technical content

Super Low Noise High Gain Heterojunction FET

  • VERY HIGH fmax: 120GHz
  • TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB ASSOCIATED GAIN AT 12 GHz
  • 0.3 X 180 MICRON RECESSED “ MUSHR OOM” GATE
  • Si3N 4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY
  • Idss SORTED IN 5 mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT EPB018A5 0.50 0.60 EPB018A7 0.65 0.80 NF Noise Figure, f=12GHz Vds=2V, Ids=15mA EPB018A9 0.95 1.20 dB EPB018A5 12.0 13.0 EPB018A7 11.5 12.5 Ga Associated Gain, f=12GHz Vds=2V, Ids=15mA EPB018A9 11.0 12.0 dB P1dB Output Power at 1dB Compression f=12GHz Vds=3V, Ids=25mA f=18GHz 15.0 15.0 dBm G 1dB Gain at 1dB Compression f=12GHz Vds=3V, Ids=25mA f=18GHz 15.0 13.0 dB Idss Saturated Drain Current Vds=2V, Vgs=0V 15 45 80 mA Gm Transconductance Vds=2V, Vgs=0V 50 90 mS Vp Pinch-off Voltage Vds=2V, Ids=1.0mA -0.8 -2.5 V BVgd Drain Breakdown Voltage Igd=10uA -3 -6 V BVgs Source Breakdown Voltage Igs=10uA -3 -6 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 185 oC/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 5V 4V Vgs Gate-Source Voltage -3V -2V Ids Drain Current Idss Idss Igsf Forward Gate Current 2mA 0.3mA Pin Input Power 12dBm @1dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Pt Total Power Dissipation 740mW 625mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com Chip Thickness: 75 ± 13 microns All Dimensions In Microns /G27 /G36 /G36/G2A /G16/G15/G13 /G19/G13 /G15/G1C /G13 /G19/G1B /G14/G18/G17 /G18/G13 /G1A/G13 /G1B/G13 /G1C/G13

Super Low Noise High Gain Heterojunction FET E PB 018A5 S-PARA M ETERS 2V, 15m A (GH z) M A G A NG M A G A NG M A G A N G M A G A NG N ote: T he data included 0.7 mils diame ter Au bonding wires: 1 gate wire, 15 m ils each; 1 drain wire, 20 m ils each; 6 source wires, 8 m ils each. E PB 018A7 S-PARA M ETERS 2V, 15m A (GH z) M A G A N G M A G A N G M A G A N G M A G A NG 40 0 0 932 74 1 0 863 -54 6 0 107 -103 4 0 417 100 8

Super Low Noise High Gain Heterojunction FET EPB018A7 Noise Parameters Vds=2V, Ids=15mA Freq Gamma Opt Nfmin (GHz) (MAG) (ANG) (dB) Rn/50 2 0.85 15 0.37 0.24 4 0.72 35 0.43 0.2 6 0.69 43 0.48 0.19 8 0.65 52 0.55 0.18 10 0.64 71 0.61 0.16 12 0.63 79 0.68 0.15 14 0.62 87 0.89 0.14 16 0.6 112 1.1 0.1 18 0.58 131 1.3 0.071 20 0.57 142 1.45 0.055 22 0.56 152 1.69 0.05 24 0.56 169 1.83 0.037 26 0.55 -176 2.05 0.045