EPA060A EXCELICS | Alldatasheet
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Technical content
High Efficiency Heterojunction Power FET
- • +26.5dBm TYPICAL OUTPUT POWE R
- • 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz
- • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
- • Si 3 N 4 PASSIVATION
- • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARI TY AND RELIABILITY
- • EPA060AV WITH VIA HOLE SOURCE GROUNDING
- • Idss SORTED IN 15mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/ TEST CONDITIONS EPA060A EPA060AV UNIT MIN TYP MAX MIN TYP MAX Output Power at 1dB Compression f=12GHz 26.5 26.5 P 1dB Vds=8V, Ids=50% Idss f=18GHz 25.0 26.5 25.0 26.5 dBm Gain at 1dB Compression f=12GHz 11.5 13.0 12.0 13.5 G 1dB Vds=8V, Ids=50% Idss f=18GHz 10.5 11.5 dB Gain at 1dB Compression PAE Vds=8V, Ids=50% Idss f=12GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 105 180 255 105 180 255 mA Gm Transconductance Vds=3V, Vgs=0V 120 190 120 190 mS BVgd Drain Breakdown Voltage Igd= 1.0mA - 11 - 15 - 11 - 15 V BVgs Source Breakdown Voltage Igs=1.0mA - 7 - 14 - 7 - 14 V Rth Thermal Resistance (Au - Sn Eutectic Attach) 65 50 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS EPA060A EPA060AV ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE 1 CONT INUOUS 2 Vds Drain - Source Voltage 12V 8V 12V 8V Vgs Gate - Source Voltage - 8V - 3V - 8V - 3V Ids Drain Current Idss 220mA Idss Idss Igsf Forward Gate Current 30mA 5mA 30mA 5mA Pin Input Power 24dBm @ 3dB Compression 24dBm @ 3dB Compression Tch Channel Temp erature 175 o C 150 o C 175 o C 150 o C Tstg Storage Temperature - 65/175 o C - 65/150 o C - 65/175 o C - 65/150 o C Pt Total Power Dissipation 2.1W 1.7W 2.7W 2.3W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970 - 8664 Fax: (408) 970 - 8998 Web Site: www.excelics.com Chip Thickness: 75 ± 20 microns All Dimensions In Microns : Via Hole No Via Hole For EPA060A
High Efficiency Heterojunction Power FET EPA060A S - PARAMETERS EPA060A 8V, 1/2 Idss (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPA060 AV 8V, 1/2 Idss (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires; 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each; n o source wires for EPA060AV.