EPA040A EXCELICS | Alldatasheet
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Technical content
High Efficiency Heterojunction Power FET
- • +24.5dBm TYPICAL OUTPUT POWE R
- • 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz
- • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
- • Si 3 N 4 PASSIVATION
- • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARI TY AND RELIABILITY
- • EPA040AV WITH VIA HOLE SOURCE GROUNDING
- • Idss SORTED IN 10mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/ TEST CONDITIONS EPA040A EPA040AV UNIT MIN TYP MAX MIN TYP MAX Output Power at 1dB Compression f=12GHz 24.5 24.5 P 1dB Vds=8V, Ids=50% Idss f=18GHz 22.5 24.5 22.5 24.5 dBm Gain at 1dB Compression f=12GHz 11.5 13.5 12.0 14.0 G 1dB Vds=8V, Ids=50% Idss f=18GHz 11.0 12.0 dB Gain at 1dB Compression PAE Vds=8V, Ids=50% Idss f=12GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 70 120 160 70 120 160 mA Gm Transconductance Vds=3V, Vgs=0V 80 130 80 130 mS BVgd Drain Breakdown Voltage Igd=1.0m A - 11 - 15 - 11 - 15 V BVgs Source Breakdown Voltage Igs=1.0mA - 7 - 14 - 7 - 14 V Rth Thermal Resistance (Au - Sn Eutectic Attach) 105 77 o C/W MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS EPA040A EPA040AV ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE 1 CONTINU OUS 2 Vds Drain - Source Voltage 12V 8V 12V 8V Vgs Gate - Source Voltage - 8V - 3V - 8V - 3V Ids Drain Current Idss 135mA Idss Idss Igsf Forward Gate Current 20mA 3mA 20mA 3mA Pin Input Power 21dBm @ 3dB Compression 21dBm @ 3dB Compression Tch Channel Tempera ture 175 o C 150 o C 175 o C 150 o C Tstg Storage Temperature - 65/175 o C - 65/150 o C - 65/175 o C - 65/150 o C Pt Total Power Dissipation 1.3W 1.1W 1.8W 1.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the ab ove ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970 - 8664 Fax: (408) 970 - 8998 Web Site: www.excelics.com Chip Thickness: 75 ± 20 microns All Dimensions In Microns : Via Hole No Via Hole For EPA040A
High Efficiency Heterojunction Power FET EPA040A S - PARAMETERS EPA040A 8V, 1/2 Idss (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG EPA040AV 8V , 1/2 Idss (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires; 1gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each; no source wire s for EPA040AV.