EPA030C-70 EXCELICS | Alldatasheet

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UPDATED 01/06/2005 High Efficiency Heterojunction Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised January 2005

FEATURES

  • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE
  • +22.0 dBm OUTPUT POWER AT 1dB COMPRESSION
  • 8.0 dB POWER GAIN AT 18GHz
  • 0.3 x 300 MICRON RECESSED “MUSHROOM” GATE
  • Si 3N4 PASSIVATION
  • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY
  • Idss SORTED IN 10mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL PARAMETERS/TEST CONDITIONS 1 MIN TYP MAX UNITS 19.5 22.0 P1dB Output Power at 1dB Compression f = 12GHz VDS = 6V, IDS ≈ 50% IDSS f = 18GHz 22.0 dBm 9.5 11.5 G1dB Gain at 1dB Compression f = 12GHz VDS = 6V, IDS ≈ 50% IDSS f = 18GHz 8.0 dB PAE Power Added Efficiency at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz 45 % IDSS Saturated Drain Current V DS = 3 V, VGS = 0 V 50 90 130 mA GM Transconductance V DS = 3 V, VGS = 0 V 60 95 mS VP Pinch-off Voltage V DS = 3 V, IDS = 1.0 mA -1.0 -2.5 V BVGD Drain Breakdown Voltage I GD = 1.0mA -11 -15 V BVGS Source Breakdown Voltage I GS = 1.0mA -7 -14 V RTH Thermal Resistance 310* oC/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOL PARAMETERS ABSOLUTE 1 CONTINUOURS 2 VDS Drain to Source Voltage 10 V 6 V VGS Gate to Source Voltage -6 V -3 V IDS Drain Current Idss 65 mA IGSF Forward Gate Current 15 mA 2.5 mA PIN Input Power 19 dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/+175°C -65/+150°C PT Total Power Dissipation 440mW 370mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.