EPA030B EXCELICS | Alldatasheet

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Technical content

High Performance Heterojunction Dual - Gate FET

  • • +18.0dBm TYPICAL OUTPUT POWER
  • • 19.5dB TYPICAL POWER GAIN AT 12GHz
  • • 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE
  • • Si 3 N 4 PASSIVATION
  • • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES EXTRA HIGH PERFORMANCE AND HIGH RELIABILITY
  • • MIXER, SWITCH, AGC AND TEMPERATURE COMPENSATION APPLICATIONS
  • • Idss SORTED IN 5mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (T a = 25 O C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT P 1dB Output Power at 1dB Compression Vds=6V, Ids=50% Idss, Vg2s=0V f=12GHz 15.0 18.0 dBm G 1dB Gain at 1dB Compression Vds=6V, Ids=50% Idss, Vg2s=0V f=12GHz 17.5 19.5 dB NF Noise Figure Vds=3V, Ids=15mA, Vg2s=0V f=12GHz 1.2 dB Ga Associated Gain Vds=3V, Ids=1 5mA, Vg2s=0V f=12GHz 17.5 dB Idss Saturated Drain Current Vds=3V, Vg1s=Vg2s=0V 30 80 115 mA Gm Transconductance Vds=3V, Vg1s= - 0.5V, Vg2s=0V 70 mS Vp1 Pinch - off Voltage Vds=3V, Ids=1.0mA, Vg2s=0V - 1.5 - 3.5 V Vp 2 Pinch - off Voltage Vds=3V, Ids=1.0mA, Vg1s=0V - 1.5 - 3.5 V BVg2d Gate 2 to Drain Breakdown Voltage Ig2d=1.0mA, Gate 1 Open - 10 - 14 V BVg1s Gate 1 to Source Breakdown Voltage Ig1s=1.0mA, Gate 2 Open - 6 - 12 V Rth Thermal Resistance (Au - S n Eutectic Attach) 125 o C/W Excelics Semiconductor, Inc., 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: (408) 737 - 1711 Fax: (408) 737 - 1868 Web Site: www.excelics.com Chip Thickness: 75 ± 13 microns All Dimensions In Microns

H igh Performance Heterojunction Dual - Gate FET MAXIMUM RATINGS AT 25 O C SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain - Source Voltage 10V 7V Vgs Gate - Source Voltage - 6V - 3.5V Ids Drain Current Idss Idss Igsf Forward Gate Current 15mA 2.5mA Pin Input Power 15dBm @3dB Compression Tch Channel Temperature 175 o C 150 o C Tstg Storage Temperature - 65/175 o C - 65/150 o C Pt Total Power Dissipation 1.1W 900mW Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. S - PARAMETERS 6V, 1/2 Idss, Vg2s=0V (GHz) MAG ANG MAG ANG MAG ANG MAG ANG ( GHz) MAG ANG MAG ANG MAG ANG MAG ANG Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each., 2 gate2 wires (to ground), 7 mils each